Datasheet > TPH1110FNH

TPH1110FNH

更新时间： 2024-11-06 14:57:35

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
9页	231K
描述
N-ch MOSFET, 250 V, 0.112 Ω@10V, SOP Advance, U-MOSⅧ-H

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TPH1110FNH 数据手册

TPH1110FNH

MOSFETs Silicon N-channel MOS (U-MOS-H)

TPH1110FNH

1. Applications

•

High-Efficiency DC-DC Converters

•

Switching Voltage Regulators

2. Features

(1) High-speed switching

(2) Small gate charge: QSW = 4.2 nC (typ.)

(3) Low drain-source on-resistance: RDS(ON) = 95 mΩ (typ.) (VGS = 10 V)

(4) Low leakage current: IDSS = 10 µA (max) (VDS = 250 V)

(5) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.3 mA)

3. Packaging and Internal Circuit

1, 2, 3: Source

4: Gate

5, 6, 7, 8: Drain

SOP Advance

4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

Gate-source voltage

Drain current (DC)

Drain current (pulsed)

Power dissipation

VDSS

VGSS

250

±20

(Silicon limit)

(Continuous)

(t = 1 ms)

(Note 1), (Note 2)

(Note 1)

IDP

(Tc = 25 )

(t = 10 s)

(Note 3)

(Note 4)

(Note 5)

2.8

(t = 10 s)

1.6

Single-pulse avalanche energy

Avalanche current

EAS

IAR

Tch

Tstg

Channel temperature

Storage temperature

150

-55 to 150



Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Start of commercial production

2013-09

2014-02-25

Rev.2.0

12 3 4 5 6 7...9

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