Datasheet > TPH1100CQ5

TPH1100CQ5

更新时间： 2024-11-21 17:00:51

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TPH1100CQ5 数据手册

TPH1100CQ5

MOSFETs Silicon N-channel MOS (U-MOS�-H)

TPH1100CQ5

1. Applications

•

High-Efficiency DC-DC Converters

Switching Voltage Regulators

Motor Drivers

2. Features

(1) Fast reverse recovery time : trr = 38 ns (typ.)

(2) Small reverse recovery charge : Qrr = 32 nC (typ.)

(3) Small gate charge: QSW = 9.9 nC (typ.)

(4) Low drain-source on-resistance: RDS(ON) = 9 mΩ (typ.) (VGS = 10 V)

(5) Low leakage current: IDSS = 10 µA (max) (VDS = 150 V)

(6) Enhancement mode: Vth = 3.1 to 4.5 V (VDS = 10 V, ID = 0.8 mA)

3. Packaging and Internal Circuit

1, 2, 3: Source

4: Gate

5, 6, 7, 8: Drain

SOP Advance(N)

Start of commercial production

2024-03

2024-02-15

Rev.2.0

Toshiba Electronic Devices & Storage Corporation

12 3 4 5 6 7...9

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