Datasheet > TPD7104F

TPD7104F

更新时间： 2024-01-28 18:29:21

品牌	Logo	应用领域
东芝 - TOSHIBA		驱动光电二极管接口集成电路
页数	文件大小	规格书
13页	581K
描述
Linear ICs - Intelligent Power Devices (IPD) - 60V Series

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中文翻译

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技术参数
数据手册

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TPD7104F 技术参数

生命周期：	Active	包装说明：	PS-8
Reach Compliance Code：	unknown	风险等级：	5.75
内置保护：	TRANSIENT; OVER CURRENT	接口集成电路类型：	BUFFER OR INVERTER BASED PERIPHERAL DRIVER
JESD-30 代码：	R-PDSO-F8	长度：	2.9 mm
功能数量：	1	端子数量：	8
最高工作温度：	125 °C	最低工作温度：	-40 °C
输出电流流向：	SINK	封装主体材料：	PLASTIC/EPOXY
封装代码：	VSOF	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE, VERY THIN PROFILE	座面最大高度：	0.85 mm
最大供电电压：	18 V	最小供电电压：	5 V
标称供电电压：	12 V	表面贴装：	YES
温度等级：	AUTOMOTIVE	端子形式：	FLAT
端子节距：	0.65 mm	端子位置：	DUAL
断开时间：	800 µs	接通时间：	800 µs
宽度：	2.4 mm	Base Number Matches：	1

TPD7104F 数据手册

TPD7104F

TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit

TPD7104F

1 channel High-Side N channel Power MOSFET Gate Driver

TPD7104F is a 1channel high-side N channel power MOSFET gate driver.

This IC contains a charge pump circuit, allowing easy configuration of a

high-side switch for large-current applications.

Features

 Charge pump circuit is built in

 Over current protection circuit is built in

 Housed in the PS-8 package and supplied in embossed carrier tape

SON8-P-0303-0.65S

Weight: 0.017 g (typ.)

Pin Assignment (top view)

Marking

Part No.

(or abbreviation code)

1 V_DD

2 IS

8 R_ISref

7 DIAG

6 IN

7104F

Lot No.

3 OUT

4 GND

5 GND

Note: ● on the lower left of the marking indicates Pin 1

Note: 4pin and 5pin should short-circuit externally.

*Weekly code: (Three digits)

Week of manufacture

(01 for first week of year, continuing up to 52 or 53)

Year of manufacture

(The last digit of the calendar year)

Note: That because of its MOS structure, this product is sensitive to static electricity

Start of commercial production

2014-9

2014-10-8

12 3 4 5 6 7...13

中文翻译

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