Datasheet > TPD60R580C

TPD60R580C

更新时间： 2024-04-09 18:59:45

品牌	Logo	应用领域
无锡紫光微 - WUXI UNIGROUP		/
页数	文件大小	规格书
12页	741K
描述
超结功率 MOSFET（Super Junction MOSFET）是一种新型功率器件，采用基于电荷平衡的器件结构，导通电阻明显下降。在应用中可减小系统功率损耗并提高其转换效率，目前国际上Infi

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TPD60R580C 数据手册

TPP60R580C, TPA60R580C, TPU60R580C, TPD60R580C, TPC60R580C,TPB60R580C

Wuxi Unigroup Microelectronics Company

600V Super-Junction Power MOSFET

FEATURES

 Very low FOM R_DS(on)×Q_g

 100% avalanche tested



RoHS compliant

APPLICATIONS

 Switch Mode Power Supply (SMPS)

 Uninterruptible Power Supply (UPS)

 Power Factor Correction (PFC)

Device Marking and Package Information

Device

TPP60R580C

TPA60R580C

TPU60R580C

TPD60R580C

TO-252

TPC60R580C

TO-262

TPB60R580C

TO-263

Package

Marking

TO-220

TO-220F

TO-251

60R580C

Absolute Maximum Ratings T_C= 25ºC, unless otherwise noted

Value

Parameter

Symbol

Unit

TO-220, TO-251, TO-252

TO-262, TO-263

TO-220F

Drain-Source Voltage (V_GS= 0V)

Continuous Drain Current

Pulsed Drain Current

V_DSS

I_D

600

I_DM

(note1)

Gate-Source Voltage

V_GSS

E_AS

I_AR

±30

Single Pulse Avalanche Energy

Avalanche Current

(note2)

(note1)

162

1.4

Repetitive Avalanche Energy

Power Dissipation (T_C= 25ºC)

E_AR

P_D

0.2

ºC

Operating Junction and Storage Temperature Range

T_J, T_stg

-55~+150

Thermal Resistance

Value

Parameter

Symbol

Unit

TO-220, TO-251, TO-252

TO-262, TO-263

TO-220F

4.5

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

R_thJC

R_thJA

2.0

ºC/W

V3.0

www.tsinghuaicwx.com

12 3 4 5 6 7...12

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