Datasheet > TPD60R1K5MFD

TPD60R1K5MFD

更新时间： 2024-04-09 19:01:15

品牌	Logo	应用领域
无锡紫光微 - WUXI UNIGROUP		电子
页数	文件大小	规格书
8页	451K
描述
Multi-EPI超结功率MOSFET(Multi-EPI Super Junction MOSFET)是种新型功率器件，无锡紫光微电子限公司在国内率先推出成熟的Multi-EPI超结功率MOSF

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TPD60R1K5MFD 数据手册

TPD60R1K5MFD

Wuxi Unigroup Microelectronics Co.,Ltd

600V Super-junction Power MOSFET

Description

600V Super-junction Power MOSFET

Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs，designed according to the SJ

principle and pioneered. The Multi-EPI SJ MOSFET provide an extremely fast and robust body diode. Also provide an extremely

low switching, communication and conduction losses device with highest robustness make especially resonant switching

applications more reliable, more efficient, lighter and cooler, designed by Wuxi Unigroup Microelectronics Company.

Features

Applications



Ultra-fast body diode

Very low FOM R_DS(on)×Q_g

100% avalanche tested

Easy to use/drive

 Switch Mode Power Supply (SMPS)

 Uninterruptible Power Supply (UPS)

 Power Factor Correction (PFC)

 LLC Half-bridge

RoHS compliant

 Charger

Integrated ESD protection diode

TO-252

Device Marking and Package Information

Device

Package

Marking

TPD60R1K5MFD

TO-252

60R1K5MFD

Key Performance Parameters

Parameter

Value

650

1.5

Unit

V_DS@ T_j,max

R_DS(on),max

Q_g,typ

7.1

I_D

I_D,pulse

E_OSS@ 400V

0.95

500

μJ

A/μs

Body Diode di_F/dt

ESD Class（HBM）

t_rr

80.3

0.13

3.24

μC

Q_rr

I_rrm

V1.0

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