Datasheet > TPD60R1K4M

TPD60R1K4M

更新时间： 2024-09-30 17:00:51

品牌	Logo	应用领域
无锡紫光微 - WUXI UNIGROUP		电子
页数	文件大小	规格书
9页	676K
描述
Multi-EPI超结功率MOSFET(Multi-EPI Super Junction MOSFET)是种新型功率器件，无锡紫光微电子限公司在国内率先推出成熟的Multi-EPI超结功率MOSF

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中文翻译

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数据手册

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TPD60R1K4M 数据手册

TPD60R1K4M,TPU60R1K4M

Wuxi Unigroup Microelectronics Co.,Ltd

600V Super-junction Power MOSFET

Description

600V Super-junction Power MOSFET

Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs，designed according to the SJ

principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication and conduction losses device with

highest robustness make especially resonant switching applications more reliable, more efficient, lighter and cooler, designed by

Wuxi Unigroup Microelectronics Company.

Features

Applications

l Very low FOM RDS(on)×Qg

l Switch Mode Power Supply (SMPS)

l 100% avalanche tested

l Uninterruptible Power Supply (UPS)

l Easy to use/drive

l Power Factor Correction (PFC)

l RoHS compliant

l Charger

l Integrated ESD protection diode

TO-251

TO-252

Device Marking and Package Information

Device

Package

TO-252

TO-251

Marking

TPD60R1K4M

TPU60R1K4M

60R1K4M

Key Performance Parameters

Parameter

V_DS@ T_j,max

R_DS(on),max

Value

650

1.4

7.1

Unit

Q_g,typ

I_D

I_D,pulse

ESD class（HBM）

E_OSS@ 400V

Body Diode di_F/dt

0.91

500

μJ

A/μs

V1.0

www.tsinghuaicwx.com

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