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TPD2EUSB30_1012 PDF预览

TPD2EUSB30_1012

更新时间： 2024-11-19 08:40:03
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德州仪器 - TI /
页数 文件大小 规格书
16页 1493K
描述
2, 4-CHANNEL PROTECTION SOLUTION FOR SUPER-SPEED (6 GBPS) USB 3.0 INTERFACE

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TPD2EUSB30_1012 数据手册

 浏览型号TPD2EUSB30_1012的Datasheet PDF文件第2页浏览型号TPD2EUSB30_1012的Datasheet PDF文件第3页浏览型号TPD2EUSB30_1012的Datasheet PDF文件第4页浏览型号TPD2EUSB30_1012的Datasheet PDF文件第5页浏览型号TPD2EUSB30_1012的Datasheet PDF文件第6页浏览型号TPD2EUSB30_1012的Datasheet PDF文件第7页 
TPD2EUSB30, TPD2EUSB30A, TPD4EUSB30  
www.ti.com  
SLVSAC2A –AUGUST 2010–REVISED DECEMBER 2010  
2, 4-CHANNEL PROTECTION SOLUTION FOR SUPER-SPEED (6 GBPS) USB 3.0  
INTERFACE  
Check for Samples: TPD2EUSB30, TPD2EUSB30A, TPD4EUSB30  
1
FEATURES  
DRT PACKAGE  
(TOP VIEW)  
•
Single and Dual-Pair Differential Lines to  
Protect the Differential Data and Clock Lines of  
the USB3.0, eSATA, or LVD Interface  
1
D+  
D–  
3
•
Flow-Through Pin Mapping for the High-Speed  
Lines Ensures near Zero Additional Skew Due  
to Board Layout While Placing Protection Chip  
Near the Connector  
GND  
2
DQA PACKAGE  
(TOP VIEW)  
•
•
Supports Data Rates in Excess of 6 Gbps  
ESD Protection Meets or Exceeds  
IEC61000-4-2 (Level 4)  
1
2
3
4
5
10  
9
D1+  
D1–  
GND  
D2+  
D2–  
N.C.  
N.C.  
GND  
N.C.  
N.C.  
•
•
•
•
•
Low Capacitance 0.05pF (IO to IO)  
1 Ω Dynamic Resistance  
5-A Peak Pulse Current (per 8/20 ms Pulse)  
Industrial Temperature Range: –40°C to 85°C  
Space-Saving DRT, DQA Packages  
8
7
APPLICATIONS  
6
•
•
•
•
•
Notebooks  
Set-Top Boxes  
DVD Players  
Media Players  
Portable Computers  
DESCRIPTION/ORDERING INFORMATION  
The TPD2EUSB30, TPD2EUSB30A, and TPD4EUSB30 provide 2 and 4 channel ESD and surge protection  
solutions in space saving, flow-through packages. These devices have been designed to protect sensitive  
components which are connected to ultra high-speed data and transmission lines. These devices also offer 5 A  
(8/20 ms) peak pulse current ratings per IEC 61000-4-5 (lightning) specification.  
The monolithic silicon technology allows matching between the differential signal pairs. The differential 0.05-pF  
capacitance ensures that the signal distortion due to added ESD clamp remains minimal at high-speed  
differential data transmission.  
The TPD2EUSB30A offers low 4.5V dc break-down voltage. The low capacitance and break-down voltage,  
coupled low dynamic resistance, make the TPD2EUSB30A a superior ESD/ surge protection device for  
high-speed differential IOs based off ultra-low voltage process nodes.  
The TPD2EUSB30 and TPD2EUSB30A are offered in space saving DRT (1 mm × 1 mm) package. The  
TPD4EUSB30 is offered in space saving DQA (1 mm × 2.5 mm) package. These devices are characterized for  
operation over ambient air temperature range of –40°C to 85°C.  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas  
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
PRODUCTION DATA information is current as of publication date.  
Copyright © 2010, Texas Instruments Incorporated  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
 
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