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TPCP8J01(TE85L,F) PDF预览

TPCP8J01(TE85L,F)

更新时间: 2024-11-24 19:57:39
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
9页 306K
描述
MOSFET N/P-CH 32V 2-3V1G

TPCP8J01(TE85L,F) 技术参数

是否Rohs认证: 符合生命周期:End Of Life
包装说明:,Reach Compliance Code:unknown
风险等级:5.59最大集电极电流 (IC):0.1 A
最小直流电流增益 (hFE):80元件数量:1
最高工作温度:150 °C子类别:Other Transistors
VCEsat-Max:0.3 VBase Number Matches:1

TPCP8J01(TE85L,F) 数据手册

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TPCP8J01  
TOSHIBA Multi-chip Device Silicon P Channel MOS Type (U-MOSIV) /Silicon NPN Epitaxial Type  
TPCP8J01  
Notebook PC Applications  
Portable Equipment Applications  
Unit: mm  
0.33±0.05  
Lead(Pb)-Free  
Small mounting area due to small and thin package  
Low drain-source ON resistance: P Channel R  
High forward transfer admittance: P Channel |Y | = 9.6 S (typ.)  
Low leakage current: I  
Enhancement-mode: P Channel V = 0.8 to 2.0 V  
A
M
0.05  
5
8
= 27 m(typ.)  
DS (ON)  
fs  
= 10 μA (V  
= 32 V)  
DSS  
DS  
0.475  
1
4
B
th  
B
M
0.05  
0.65  
(V  
DS  
= 10 V, I = 1 mA)  
D
2.9±0.1  
A
0.8±0.05  
Absolute Maximum Ratings (Ta = 25°C)  
S
0.025  
+0.1  
S
0.28  
0.17±0.02  
-0.11  
MOSFET  
+0.13  
-0.12  
1.12  
1.12  
+0.13  
-0.12  
Characteristics  
Drain-source voltage  
Symbol  
Rating  
Unit  
+0.1  
-0.11  
0.28  
V
32  
32  
±20  
5.5  
22  
V
V
V
DSS  
1. Emitter  
2. Drain  
3. Drain  
4. Drain  
5. Source  
6. Gate  
V
Drain-gate voltage (R  
Gate-source voltage  
= 20 kΩ)  
DGR  
GS  
7. Base  
V
GSS  
8. Collector  
DC  
(Note 1)  
I
D
Drain current  
A
W
JEDEC  
JEITA  
Pulse (Note 1)  
I
DP  
Drain power dissipation  
Drain power dissipation  
(t = 5 s)  
(Note 2a)  
(t = 5 s)  
P
2.14  
1.06  
5.8  
D
D
TOSHIBA  
2-3V1G  
Weight: 0.011 g (typ.)  
P
W
(Note 2b)  
Single pulse avalanche energy  
Circuit Configuration  
E
mJ  
AS  
(Note 3)  
8
7
5
6
Avalanche current  
I
3  
A
AR  
Repetitive avalanche energy (Note 4)  
E
0.21  
mJ  
AR  
R1  
BRT  
R2  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
50  
50  
V
V
2
1
4
3
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
6
V
Marking (Note5)  
DC  
(Note 1)  
I
100  
200  
mA  
mW  
C
8
7
6
5
Collector power dissipation  
P
C
Note: For Notes 1 to 5, refer to the next page.  
This transistor is an electrostatic-sensitive device. Handle with caution.  
8J01  
1
2
3
4
Lot No.  
1
2006-11-17  

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