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TPCP8H01 PDF预览

TPCP8H01

更新时间: 2024-11-05 03:11:43
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体小信号双极晶体管场效应晶体管开关光电二极管
页数 文件大小 规格书
8页 254K
描述
TOSHIBA Multi-Chip Transistor Silicon NPN Epitaxial Type, Field Effect Transistor Silicon N Channel MOS Type

TPCP8H01 技术参数

生命周期:Lifetime Buy包装说明:SMALL OUTLINE, R-PDSO-F8
针数:8Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.55
Is Samacsys:N最大集电极电流 (IC):5 A
集电极-发射极最大电压:50 V配置:SINGLE WITH BUILT-IN FET AND DIODE
最小直流电流增益 (hFE):100JESD-30 代码:R-PDSO-F8
元件数量:1端子数量:8
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN最大功率耗散 (Abs):1 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子形式:FLAT
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICON最大关闭时间(toff):525 ns
Base Number Matches:1

TPCP8H01 数据手册

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TPCP8H01  
TOSHIBA Multi-Chip Transistor  
Silicon NPN Epitaxial Type, Field Effect Transistor Silicon N Channel MOS Type  
TPCP8H01  
HIGH-SPEED SWITCHING APPLICATIONS  
0.33±0.05  
A
M
0.05  
5
8
LORD SWITCHING APPLICATIONS  
STROBE FLASH APPLICATIONS  
Multi-chip discrete device; built-in NPN transistor for main switch and  
N-ch MOS FET for drive  
0.475  
1
4
B
B
M
0.05  
0.65  
High DC current gain: h  
= 250 to 400 (I = 0.5 A) (NPN transistor)  
C
2.9±0.1  
FE  
A
Low collector-emitter saturation voltage: V  
= 0.13 V (max)  
CE (sat)  
0.8±0.05  
(NPN transistor)  
High-speed switching: t = 25 ns (typ.) (NPN transistor)  
S
0.025  
+0.1  
S
f
0.28  
0.17±0.02  
-0.11  
+0.13  
-0.12  
1.12  
1.12  
Absolute Maximum Ratings (Ta = 25°C)  
+0.13  
-0.12  
Transistor  
+0.1  
0.28  
-0.11  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
5. BASE  
6. EMITTER  
7. GATE  
1. SOURCE  
2. COLLECTOR  
3. COLLECTOR  
4. COLLECTOR  
100  
80  
V
CBO  
8. DRAIN  
V
CEX  
CEO  
EBO  
Collector-emitter voltage  
Emitter-base voltage  
V
V
A
JEDEC  
-
50  
V
V
6
JEITA  
-
I
5.0  
7.0  
0.5  
1.0  
150  
DC (Note 1)  
Pulse (Note 1)  
C
TOSHIBA  
2-3V1E  
Collector current  
I
CP  
Weight : 0.017g (Typ.)  
Base current  
I
A
B
Collector power dissipation (NPN)  
Junction temperature  
P
(Note 2)  
W
°C  
C
T
j
Circuit Configuration  
8
7
6
5
MOS FET  
Characteristics  
Symbol  
Rating  
Unit  
20  
±10  
100  
200  
150  
Drain-Source Voltage  
Gate-Source Voltage  
V
V
V
V
DSS  
GSS  
I
DC  
Drain Current  
D
mA  
°C  
1
2
3
4
I
Pulse  
DP  
Channel Temperature  
T
ch  
Note 1: Ensure that the junction (channel) temperature does not exceed 150.  
Note 2: Device mounted on a glass-epoxy board (FR-4, 25.4×25.4×1.6 mm, Cu area: 645 mm2)  
Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly  
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute  
maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
This transistor is an electrostatic-sensitive device. Please handle with caution.  
1
2006-11-13  

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