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TPCP8G01 PDF预览

TPCP8G01

更新时间: 2024-11-20 21:16:11
品牌 Logo 应用领域
东芝 - TOSHIBA 开关光电二极管晶体管
页数 文件大小 规格书
5页 224K
描述
TRANSISTOR 3000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-3V1N, 8 PIN, BIP General Purpose Small Signal

TPCP8G01 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-F8
针数:8Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.8
最大集电极电流 (IC):3 A集电极-发射极最大电压:20 V
配置:SINGLE WITH BUILT-IN FET AND DIODE最小直流电流增益 (hFE):100
JESD-30 代码:R-PDSO-F8元件数量:1
端子数量:8最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:PNP
认证状态:Not Qualified表面贴装:YES
端子形式:FLAT端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

TPCP8G01 数据手册

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TPCP8G01  
TOSHIBA Multi-Chip Device  
Transistor Silicon PNP Epitaxial TypeField Effect Transistor Silicon P Channel MOS Type  
TPCP8G01  
Unit: mm  
Switching Applications  
0.33±0.05  
A
M
0.05  
5
8
Multi-chip discrete device: PNP Transistor and Channel MOS FET  
Small footprint due to small and thin package  
Absolute Maximum Ratings (Ta = 25°C)  
Transistor  
0.475  
1
4
B
B
M
0.05  
0.65  
2.9±0.1  
A
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
0.8±0.05  
S
0.025  
V
30  
20  
7  
V
V
V
+0.1  
S
CBO  
0.28  
0.17±0.02  
-0.11  
Collector-emitter voltage  
Emitter-base voltage  
V
CEO  
V
EBO  
+0.13  
-0.12  
1.12  
1.12  
+0.13  
-0.12  
DC  
I
3.0  
5.0  
300  
0.94  
1.77  
150  
C
Collector current  
A
mA  
W
+0.1  
(Note 1)  
Pulse  
I
CP  
0.28  
-0.11  
Base current  
I
B
DC  
Collector power dissipation  
(Note 2)  
P
JEDEC  
JEITA  
C
t = 10s  
Junction temperature  
T
j
°C  
TOSHIBA  
2-3V1N  
Weight: 0.017 g (typ.)  
MOS FET  
Characteristics  
Drain-source voltage  
Symbol  
Rating  
Unit  
V
V
20  
±8  
V
V
DSS  
Gate-source voltage  
GSS  
DC  
Pulse  
DC  
I
2.0  
4.0  
0.94  
1.77  
150  
D
Drain current  
(Note 1)  
A
I
DP  
Drain power dissipation  
(Note 1)  
P
(Note 1)  
W
D
t = 10s  
Channel temperature  
T
°C  
ch  
Common Absolute Maximum Ratings (Ta=25°C )  
Characteristics  
Symbol  
Rating  
Unit  
°C  
Storage temperature range  
T
55 to 150  
stg  
Note 1: Please use devices on condition that the junction temperature is below 150°C.  
Note 2: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2)  
Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly  
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute  
maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Start of commercial production  
2009-01  
1
2013-11-01  

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