Datasheet > TPCP8001-H(TE85LF

TPCP8001-H(TE85LF

更新时间： 2024-11-08 19:59:19

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
7页	231K
描述
Small Signal Field-Effect Transistor

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技术参数
数据手册

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TPCP8001-H(TE85LF 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.72
Base Number Matches：	1

TPCP8001-H(TE85LF 数据手册

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TPCP8001-H

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII)

TPCP8001-H

High Efficiency DC／DC Converter Applications

Unit: mm

Notebook PC Applications

0.33±0.05

0.05

Portable Equipment Applications

•

Small footprint due to a small and thin package

High speed switching

0.475

0.05

0.65

Small gate charge: Q

= 3.6 nC (typ.)

2.9±0.1

Low drain-source ON-resistance: R

= 13 mΩ (typ.)

DS (ON)

0.8±0.05

High forward transfer admittance: |Y | = 16 S (typ.)

0.025

+0.1

0.28

0.17±0.02

-0.11

Low leakage current: I

= 10 μA (max) (V

= 30V)

DSS

Enhancement mode: V = 1.1 to 2.3 V (V

= 10 V, I = 1 mA)

+0.13

-0.12

1.12

+0.13

-0.12

Absolute Maximum Ratings (Ta = 25°C)

+0.1

0.28

1．Source

2．Source

3．Source

4．Gate

5．Drain

6．Drain

7．Drain

8．Drain

-0.11

Characteristic

Drain-source voltage

Symbol

Rating

Unit

DSS

Drain-gate voltage (R

Gate-source voltage

= 20 kΩ)

JEDEC

JEITA

―

DGR

±20

7.2

28.8

GSS

(Note 1)

TOSHIBA

2-3V1K

Drain current

Pulsed (Note 1)

Weight: 0.017 g (typ.)

Drain power dissipation

(t = 5 s)

(Note 2a)

(t = 5 s)

1.68

0.84

Circuit Configuration

(Note 2b)

Single-pulse avalanche energy

(Note 3)

33.6

7.2

Avalanche current

Repetitive avalanche energy

0.066

(Note 2a) (Note 4)

150

°C

Channel temperature

−55 to 150

Storage temperature range

stg

Marking (Note 5)

Note: For Notes 1 to 5, refer to the next page.

This transistor is an electrostatic-sensitive device. Handle with care.

8001H

※

Lot No.

2006-05-29

12 3 4 5 6 7

中文翻译

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