Datasheet > TPCF8303_07

TPCF8303_07

更新时间： 2024-11-26 03:26:47

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体晶体管场效应晶体管
页数	文件大小	规格书
7页	230K
描述
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)

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TPCF8303_07 数据手册

TPCF8303

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)

TPCF8303

Notebook PC Applications

Unit: mm

Portable Equipment Applications

•

Low drain-source ON resistance: R

= 43 mΩ (typ.)

DS (ON)

High forward transfer admittance: |Y | = 6.0 S (typ.)

Low leakage current: I

= −10 μA (max) (V

= −20 V)

DSS

Enhancement-model: V = −0.45 to −1.2 V

= −10 V, I = −200 μA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-source voltage

Symbol

Rating

Unit

−20

±8

DSS

Drain-gate voltage (R

Gate-source voltage

= 20 kΩ)

DGR

GSS

Pulse

(Note 1)

−3.0

−12

Drain current

JEDEC

JEITA

―

Single-device operation

(Note 3a)

1.35

1.12

0.53

0.33

D (1)

Drain power

dissipation

(t = 5 s) (Note 2a)

Single-device value at

dual operation (Note 3b)

TOSHIBA

2-3U1B

D (2)

D (1)

D (2)

Weight: 0.011 g (typ.)

Single-device operation

(Note 3a)

Drain power

dissipation

(t = 5 s) (Note 2b)

Circuit Configuration

Single-device value at

dual operation (Note 3b)

Single pulse avalanche energy

Avalanche current

(Note 4)

0.58

−1.5

Repetitive avalanche energy

Single-device value at dual operation

0.11

(Note 2a, 3b, 5)

Channel temperature

150

°C

Storage temperature range

stg

−55~150

Note: For (Note 1), (Note 2), (Note 3), (Note 4), (Note 5) and (Note 6),

please refer to the next page.

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

This transistor is an electrostatic sensitive device. Please handle with caution.

2006-11-16

12 3 4 5 6 7

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与TPCF8303_07相关器件

型号	品牌	获取价格	描述	数据表
TPCF8304	TOSHIBA	获取价格	TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS IV)
TPCF8304(TE85L,F)	TOSHIBA	获取价格	MOSFET P-CH DUAL 30V 3.2A 2-3U1B
TPCF8305	TOSHIBA	获取价格	Notebook PCs Mobile Handsets
TPCF8402	TOSHIBA	获取价格	Portable Equipment Applications Motor Drive Applications DC-DC Converter Applications
TPCF8402(TE85L)	TOSHIBA	获取价格	MOSFET N/P-CH 30V 3.2A VS-8
TPCF8402(TE85L,F)	TOSHIBA	获取价格	TRANSISTOR,MOSFET,PAIR,COMPLEMENTARY,30V V(BR)DSS,4A I(D),TSOP
TPCF8402_09	TOSHIBA	获取价格	Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)
TPCF8402_0912	TOSHIBA	获取价格	Portable Equipment Applications Motor Drive Applications DC-DC Converter Applications
TPCF8A01	TOSHIBA	获取价格	Notebook PC Applications Portable Equipment Applications
TPCF8B01	TOSHIBA	获取价格	TOSHIBA Multi-Chip Device Silicon P Channel MOS Type (U-MOS III) / Schottky Barrier Diode

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