Datasheet > TPCF8107(TE85L,F)

TPCF8107(TE85L,F)

更新时间： 2024-11-26 15:54:55

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
9页	228K
描述
Small Signal Field-Effect Transistor

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技术参数
数据手册

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TPCF8107(TE85L,F) 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.69
Base Number Matches：	1

TPCF8107(TE85L,F) 数据手册

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TPCF8107

MOSFETs Silicon P-Channel MOS (U-MOS)

TPCF8107

1. Applications

•

Lithium-Ion Secondary Batteries

Power Management Switches

Notebook PCs

2. Features

(1) Small footprint due to a small and thin package

(2) Low drain-source on-resistance: RDS(ON) = 22 mΩ (typ.) (VGS = -10 V)

(3) Low leakage current: IDSS = -10 µA (max) (VDS = -30 V)

(4) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -0.1 mA)

3. Packaging and Internal Circuit

5: Source

4: Gate

1, 2, 3, 6, 7, 8: Drain

VS-8

4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

Gate-source voltage

Drain current (DC)

Drain current (pulsed)

Power dissipation

VDSS

VGSS

-30

-25/+20

-6

(Note 1)

(Note 2)

(Note 3)

(Note 4)

IDP

-24

(t = 5 s)

2.5

Power dissipation

0.7

Single-pulse avalanche energy

Avalanche current

EAS

IAR

23.4

-6

Channel temperature

Storage temperature

Tch

Tstg

150



-55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Start of commercial production

2010-03

2014-02-18

Rev.2.0

12 3 4 5 6 7...9

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