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TPCF8102_07

更新时间： 2024-11-26 03:26:47
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体晶体管场效应晶体管
页数 文件大小 规格书
7页 212K
描述
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)

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TPCF8102  
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)  
TPCF8102  
Notebook PC Applications  
Unit: mm  
Portable Equipment Applications  
•
•
•
•
Low drain-source ON resistance: R  
= 24 mΩ (typ.)  
DS (ON)  
High forward transfer admittance: |Y | = 14 S (typ.)  
fs  
Low leakage current: I  
= −10 μA (max) (V  
= −20 V)  
DSS  
DS  
Enhancement mode: V = −0.5 to −1.2 V  
th  
(V  
DS  
= −10 V, I = −200 μA)  
D
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Drain-source voltage  
Symbol  
Rating  
Unit  
−20  
−20  
±8  
V
V
V
V
DSS  
Drain-gate voltage (R  
Gate-source voltage  
= 20 kΩ)  
V
GS  
DGR  
V
GSS  
I
−6  
DC  
(Note 1)  
D
Drain current  
A
I
−24  
Pulsed (Note 1)  
DP  
JEDEC  
JEITA  
―
―
Drain power dissipation  
Drain power dissipation  
(t = 5 s)  
2.5  
0.7  
W
W
P
D
D
(Note 2a)  
(t = 5 s)  
(Note 2b)  
P
TOSHIBA  
2-3U1A  
5.9  
−3  
mJ  
A
Single pulse avalanche energy(Note 3)  
Avalanche current  
E
Weight: 0.011 g (typ.)  
AS  
I
AR  
0.25  
Repetitive avalanche energy (Note 4)  
Channel temperature  
E
mJ  
°C  
°C  
AR  
150  
T
ch  
−55~150  
Storage temperature range  
T
stg  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate  
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and  
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).  
Thermal Characteristics  
Circuit Configuration  
8
7
6
5
Characteristics  
Symbol  
Max  
50.0  
Unit  
Thermal resistance, channel to ambient (t = 5 s)  
R
°C/W  
th (ch-a)  
th (ch-a)  
(Note 2a)  
Thermal resistance, channel to ambient (t = 5 s)  
R
178.6 °C/W  
(Note 2b)  
1
2
3
4
Note: (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5): See the next page.  
This transistor is an electrostatic-sensitive device. Please handle with caution.  
1
2006-11-16  
1234567

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