Datasheet > TPCF8101(TE85L)

TPCF8101(TE85L)

更新时间： 2024-11-26 20:58:03

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
7页	220K
描述
MOSFET P-CH 12V 6A VS-8

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

TPCF8101(TE85L) 技术参数

是否Rohs认证：	不符合	生命周期：	Not Recommended
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.66	配置：	Single
最大漏极电流 (Abs) (ID)：	6 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	P-CHANNEL	最大功率耗散 (Abs)：	2.5 W
子类别：	Other Transistors	表面贴装：	YES
Base Number Matches：	1

TPCF8101(TE85L) 数据手册

TPCF8101

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)

TPCF8101

Notebook PC Applications

Unit: mm

Portable Equipment Applications

•

Low drain-source ON resistance: R

= 22 mΩ (typ.)

DS (ON)

High forward transfer admittance: |Y | = 14 S (typ.)

Low leakage current: I

= −10 μA (max) (V

= −12 V)

DSS

Enhancement model: V = −0.5 to −1.2 V

= −10 V, I = −200 μA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-source voltage

Symbol

Rating

Unit

−12

±8

DSS

Drain-gate voltage (R

Gate-source voltage

= 20 kΩ)

DGR

GSS

−6

(Note 1)

Drain current

−24

Pulsed (Note 1)

JEDEC

JEITA

―

Drain power dissipation

(t = 5 s)

2.5

0.7

(Note 2a)

(t = 5 s)

(Note 2b)

TOSHIBA

2-3U1A

6.3

−3

Single pulse avalanche energy(Note 3)

Avalanche current

Weight: 0.011 g (typ.)

0.25

Repetitive avalanche energy (Note 4)

Channel temperature

°C

150

−55 to 150

Storage temperature range

stg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Circuit Configuration

Characteristics

Symbol

Max

50.0

Unit

Thermal resistance, channel to ambient (t = 5 s)

°C/W

th (ch-a)

(Note 2a)

Thermal resistance, channel to ambient (t = 5 s)

178.6 °C/W

(Note 2b)

Note: (Note 1), (Note 2), (Note 3) and (Note 4): See the third page.

This transistor is an electrostatic-sensitive device. Please handle with caution.

2009-09-29

12 3 4 5 6 7

中文翻译

下载PDF

与TPCF8101(TE85L)相关器件

型号	品牌	获取价格	描述	数据表
TPCF8101(TE85L,F)	TOSHIBA	获取价格	MOSFET P-CH 12V 6A VS-8
TPCF8101_07	TOSHIBA	获取价格	TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)
TPCF8102	TOSHIBA	获取价格	Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)
TPCF8102_07	TOSHIBA	获取价格	TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)
TPCF8103	TOSHIBA	获取价格	TRANSISTOR SILICON P CHANNEL MOS TYPE(U－MOSゲ)
TPCF8103_07	TOSHIBA	获取价格	TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)
TPCF8104	TOSHIBA	获取价格	TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE(U?MOS?)
TPCF8104(TE85L,F,M	TOSHIBA	获取价格	MOSFET P-CH -30V -6A VS-8
TPCF8104_07	TOSHIBA	获取价格	TOSHIBA Field Effect Transistor Silicon P Cha
TPCF8105	TOSHIBA	获取价格	MOSFETs Silicon P-Channel MOS (U-MOS)

与TPCF8101(TE85L)相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

43
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

33
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

61
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

58

产品中心

服务支持

精选活动

关于我们

帮助中心

TPCF8101(TE85L)

TPCF8101(TE85L) 技术参数

TPCF8101(TE85L) 数据手册

与TPCF8101(TE85L)相关器件

与TPCF8101(TE85L)相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

TPCF8101(TE85L)

TPCF8101(TE85L) 技术参数

TPCF8101(TE85L) 数据手册

与TPCF8101(TE85L)相关器件

与TPCF8101(TE85L)相关文章

您还可以找

您在本页遇到什么问题？