Datasheet > TPCF8001

TPCF8001

更新时间： 2024-11-26 03:26:47

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体晶体管场效应晶体管
页数	文件大小	规格书
7页	243K
描述
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)

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TPCF8001 数据手册

TPCF8001

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)

TPCF8001

Notebook PC Applications

Unit: mm

Portable Equipment Applications

•

Low drain-source ON resistance: R

= 19 mΩ (typ.)

DS (ON)

High forward transfer admittance: |Y | = 8 S (typ.)

Low leakage current: I

= 10 μA (max.) (V

= 30 V)

DSS

Enhancement mode: V = 1.3 to 2.5 V

= 10 V, I = 1mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-source voltage

Symbol

Rating

Unit

±20

DSS

JEDEC

JEITA

―

Drain-gate voltage (R

Gate-source voltage

= 20 kΩ)

DGR

GSS

TOSHIBA

2-3U1A

(Note 1)

Drain current

Weight: 0.011 g (typ.)

Pulse (Note 1)

Drain power dissipation

(t = 5 s)

2.5

0.7

(Note 2a)

Circuit Configuration

(t = 5 s)

(Note 2b)

3.5

Single-pulse avalanche energy(Note 3)

Avalanche current

0.25

Repetitive avalanche energy (Note 4)

Channel temperature

°C

150

−55~150

Storage temperature range

stg

Note: For Notes 1 to 5, refer to the next page

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

This transistor is an electrostatic-sensitive device. Handle with care.

2007-01-16

12 3 4 5 6 7

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