Datasheet > TPCC8107

TPCC8107

更新时间： 2024-11-26 17:00:59

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
9页	275K
描述
Not Recommended for New Design and EOL announced??

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TPCC8107 技术参数

TPCC8107

MOSFETs Silicon P-Channel MOS (U-MOS�)

TPCC8107

1. Applications

•

Motor Drivers

DC-DC Converters

Switching Voltage Regulators

2. Features

(1) Small, thin package

(2) Low drain-source on-resistance: RDS(ON) = 23.5 mΩ (typ.) (VGS = -10 V)

(3) Low leakage current: IDSS = -10 µA (max) (VDS = -60 V)

(4) Enhancement mode: Vth = -2.0 to -3.0 V (VDS = -10 V, ID = -1.0 mA)

3. Packaging and Internal Circuit

1,2,3: Source

4: Gate

5, 6, 7, 8: Drain

TSON Advance

Start of commercial production

2012-07

2023-12-11

Rev.5.0

Toshiba Electronic Devices & Storage Corporation

12 3 4 5 6 7...9

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