Datasheet > TPCC8104(TE12L1)

TPCC8104(TE12L1)

更新时间： 2024-11-25 15:54:55

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
9页	231K
描述
TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,20A I(D),LLCC

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技术参数
数据手册

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TPCC8104(TE12L1) 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
风险等级：	5.61	Is Samacsys：	N
配置：	Single	最大漏极电流 (Abs) (ID)：	20 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	极性/信道类型：	P-CHANNEL
最大功率耗散 (Abs)：	27 W	子类别：	Other Transistors
表面贴装：	YES	Base Number Matches：	1

TPCC8104(TE12L1) 数据手册

TPCC8104

MOSFETs Silicon P-Channel MOS (U-MOS)

TPCC8104

1. Applications

•

Lithium-Ion Secondary Batteries

•

Power Management Switches

2. Features

(1) Small footprint due to a small and thin package

(2) Low drain-source on-resistance: RDS(ON) = 6.8 mΩ (typ.) (VGS = -10 V)

(3) Low leakage current: IDSS = -10 µA (max) (VDS = -30 V)

(4) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -0.5 mA)

3. Packaging and Internal Circuit

1, 2, 3: Source

4: Gate

5, 6, 7, 8: Drain

TSON Advance

4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

Gate-source voltage

Drain current (DC)

Drain current (pulsed)

Power dissipation

VDSS

VGSS

-30

-25/+20

-20

(Note 1)

IDP

-60

(Tc = 25)

(t = 10 s)

(Note 2)

(Note 3)

(Note 4)

1.9

0.7

Single-pulse avalanche energy

Avalanche current

EAS

IAR

104

-20

Channel temperature

Storage temperature

Tch

Tstg

150



-55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2011-06-07

Rev.2.0

12 3 4 5 6 7...9

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