Datasheet > TPCC8103_10

TPCC8103_10

更新时间： 2024-11-25 06:01:55

品牌	Logo	应用领域
东芝 - TOSHIBA		便携式 PC
页数	文件大小	规格书
7页	219K
描述
Noteboook PC Applications Portable Eqipment Applications

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TPCC8103_10 数据手册

TPCC8103

TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOSⅤ)

TPCC8103

Notebook PC Applications

Unit: mm

Portable Equipment Applications

•

Small footprint due to a small and thin package

Low drain-source ON-resistance:

= 9.4 mΩ (typ.) (V

= −10 V)

DS (ON)

•

Low leakage current: I

= -10 μA (max) (V

= -30 V)

DSS

Enhancement mode: V = -0.8 to -2.0 V (V

= -10 V, I = -1.0 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Drain-source voltage

Symbol

Rating

Unit

−30

±20

−18

−54

DSS

Drain-gate voltage (R

Gate-source voltage

= 20 kΩ)

DGR

GSS

(Note 1)

Drain current

Pulsed (Note 1)

Drain power dissipation (Tc = 25°C)

Drain power dissipation

(t = 10 s)

(Note 2a)

1.9

0.7

Drain power dissipation

(t = 10 s)

(Note 2b)

Single-pulse avalanche energy

(Note 3)

1,2,3:SOURCE 4:GATE

5,6,7,8:DRAIN

Avalanche current

−18

1.59

Repetitive avalanche energy

JEDEC

⎯

(Tc = 25°C) (Note 4)

JEITA

150

°C

Channel temperature

TOSHIBA

2-3X1A

−55 to 150

Storage temperature range

stg

Weight: 0.02 g (typ.)

Note: For Notes 1 to 4, refer to the next page.

Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability

Handbook (“Handling Precautions”/“Derating Concept and

Methods”) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Circuit Configuration

This transistor is an electrostatic-sensitive device. Handle with care.

2010-01-14

12 3 4 5 6 7

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