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TPCA8104

更新时间： 2024-11-27 08:40:07
品牌 Logo 应用领域
东芝 - TOSHIBA 开关
页数 文件大小 规格书
7页 235K
描述
High-Side Switching Applications

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TPCA8104 数据手册

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TPCA8104  
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS III)  
TPCA8104  
High-Side Switching Applications  
Unit: mm  
Portable Equipment Applications  
0.4±0.1  
1.27  
0.5±0.1  
0.05  
M A  
5
8
•
•
•
•
•
Small footprint due to small and thin package  
Low drain-source ON-resistance: R = 11 mΩ (typ.)  
DS (ON)  
High forward transfer admittance:|Y | = 50 S (typ.)  
0.15±0.05  
fs  
Low leakage current: I  
= -10 µA (V  
DS  
= -60 V)  
= -10 V, I = -1 mA)  
DSS  
4
0.595  
A
1
Enhancement mode: V = -0.8 to -2.0 V (V  
th DS  
D
5.0±0.2  
0.95±0.05  
0.166±0.05  
0.05  
S
S
1.1±0.2  
1
4
4.25±0.2  
Absolute Maximum Ratings (Ta = 25°C)  
8
5
Characteristic  
Drain-source voltage  
Symbol  
Rating  
Unit  
0.8±0.1  
V
-60  
-60  
±20  
-40  
-120  
45  
V
V
V
DSS  
DGR  
GSS  
1, 2, 3: Source  
5, 6, 7, 8: Drain  
4: Gate  
Drain-gate voltage (R  
Gate-source voltage  
= 20 kΩ)  
V
V
GS  
JEDEC  
JEITA  
―
―
DC  
Drain current  
Pulse  
(Note 1)  
(Note 1)  
I
D
A
I
DP  
TOSHIBA  
2-5Q1A  
Drain power dissipation (Tc = 25°C)  
Drain power dissipation (t = 10 s)  
P
D
D
Weight: 0.080 g (typ.)  
P
2.8  
1.6  
W
(Note 2a)  
Drain power dissipation (t = 10 s)  
(Note 2b)  
Circuit Configuration  
P
D
8
7
6
5
Single-pulse avalanche energy  
(Note 3)  
E
116  
-40  
4.5  
mJ  
A
AS  
Avalanche current  
I
AR  
Repetitive avalanche energy  
E
mJ  
AR  
(Tc = 25°C) (Note 4)  
Channel temperature  
T
150  
°C  
°C  
ch  
Storage temperature range  
T
stg  
−55~150  
1
2
3
4
Note: For Notes 1 to 4, see the next page.  
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate  
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and  
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).  
This transistor is an electrostatic-sensitive device. Handle with care.  
1
2006-11-17  
1234567

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