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TPC8223-H(TE12L) PDF预览

TPC8223-H(TE12L)

更新时间: 2024-11-21 20:10:31
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
9页 255K
描述
TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,30V V(BR)DSS,9A I(D),SO

TPC8223-H(TE12L) 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:,Reach Compliance Code:unknown
风险等级:5.84最大漏极电流 (Abs) (ID):9 A
FET 技术:METAL-OXIDE SEMICONDUCTOR工作模式:ENHANCEMENT MODE
最高工作温度:150 °C极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):1.5 W子类别:FET General Purpose Power
表面贴装:YESBase Number Matches:1

TPC8223-H(TE12L) 数据手册

 浏览型号TPC8223-H(TE12L)的Datasheet PDF文件第2页浏览型号TPC8223-H(TE12L)的Datasheet PDF文件第3页浏览型号TPC8223-H(TE12L)的Datasheet PDF文件第4页浏览型号TPC8223-H(TE12L)的Datasheet PDF文件第5页浏览型号TPC8223-H(TE12L)的Datasheet PDF文件第6页浏览型号TPC8223-H(TE12L)的Datasheet PDF文件第7页 
TPC8223-H  
MOSFETs Silicon N-Channel MOS (U-MOS-H)  
TPC8223-H  
1. Applications  
High-Efficiency DC-DC Converters  
Notebook PCs  
Mobile Handsets  
2. Features  
(1) Small, thin package  
(2) High-speed switching  
(3) Small gate change: QSW = 3.6 nC (typ.)  
(4) Low drain-source on-resistance: RDS(ON) = 17 m(typ.) (VGS = 4.5 V)  
(5) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)  
(6) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA)  
3. Packaging and Internal Circuit  
1, 3: Source  
2, 4: Gate  
5, 6, 7, 8: Drain  
SOP-8  
2011-07-01  
Rev.3.0  
1

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