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TPC6901 PDF预览

TPC6901

更新时间: 2024-02-03 02:08:00
品牌 Logo 应用领域
东芝 - TOSHIBA 开关光电二极管晶体管
页数 文件大小 规格书
7页 204K
描述
TRANSISTOR 1000 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-3T1A, 6 PIN, BIP General Purpose Small Signal

TPC6901 技术参数

是否Rohs认证: 符合生命周期:Not Recommended
包装说明:SMALL OUTLINE, R-PDSO-G6针数:6
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.75Is Samacsys:N
最大集电极电流 (IC):1 A集电极-发射极最大电压:50 V
配置:SEPARATE, 2 ELEMENTS最小直流电流增益 (hFE):200
JESD-30 代码:R-PDSO-G6元件数量:2
端子数量:6最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN AND PNP认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

TPC6901 数据手册

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TPC6901  
TOSHIBA Multi-Chip Transistor Silicon NPN & PNP Epitaxial Type  
TPC6901  
High-Speed Switching Applications  
Unit: mm  
MOS Gate Drive Applications  
NPN and PNP transistors are mounted on a compact and slim  
package.  
High DC current gain: NPN h  
= 400 to 1000  
= 200 to 500  
FE  
: PNP h  
FE  
Low collector-emitter saturation voltage  
: NPN V  
: PNP V  
= 0.17 V (max)  
= 0.23 V (max)  
CE (sat)  
CE (sat)  
High-speed switching: NPN t = 85 ns (typ.)  
f
: PNP t = 70 ns (typ.)  
f
Maximum Ratings  
=
(Ta 25°C)  
Rating  
Characteristics  
Symbol  
Unit  
NPN  
100  
80  
PNP  
50  
Collector-base voltage  
V
V
V
V
V
A
A
A
CBO  
V
50  
50  
Collector-emitter voltage  
Collector-emitter voltage  
Emitter-base voltage  
CEX  
CEO  
EBO  
JEDEC  
JEITA  
V
V
50  
7
7  
TOSHIBA  
2-3T1A  
I
1.0  
2.0  
0.1  
0.7  
DC (Note 1)  
C
Collector current  
Weight: 0.011 g (typ.)  
I
2.0  
0.1  
Pulse (Note 1)  
CP  
Base current  
I
B
Collector power  
dissipation (t=10 s)  
(Note 2)  
Single-device  
operation  
P (1)  
500  
400  
330  
mW  
C
Single-device  
operation  
P (2)  
C
Collector power  
dissipation (DC)  
(Note 2)  
mW  
Single-device  
value at dual  
operation  
P (3)  
C
Thermal resistance,  
junction to ambient  
(t=10 s) (Note 2)  
Single-device  
operation  
R
R
R
(1)  
250  
312  
°C/W  
°C/W  
th (j-a)  
th (j-a)  
th (j-a)  
Single-device  
operation  
(2)  
(3)  
Thermal resistance,  
junction to ambient  
(DC) (Note 2)  
Single-device  
value at dual  
operation  
378  
150  
Junction temperature  
T
j
°C  
°C  
Storage temperature range  
T
stg  
55 to 150  
Note 1: Ensure that the channel temperature does not exceed 150°C.  
Note 2:Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2)  
1
2004-07-07  

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