Datasheet > TPB65R190MFD

TPB65R190MFD

更新时间： 2024-11-12 15:18:35

品牌	Logo	应用领域
无锡紫光微 - WUXI UNIGROUP		电子
页数	文件大小	规格书
12页	774K
描述
Multi-EPI超结功率MOSFET(Multi-EPI Super Junction MOSFET)是种新型功率器件，无锡紫光微电子限公司在国内率先推出成熟的Multi-EPI超结功率MOSF

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中文翻译

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数据手册

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TPB65R190MFD 数据手册

TPA65R190MFD,TPB65R190MFD,TPP65R190MFD,TPW65R190MFD

Wuxi Unigroup Microelectronics Co.,Ltd

650V Super-junction Power MOSFET

Description

650V Super-junction Power MOSFET

Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs，designed according to the SJ

principle and pioneered. The Multi-EPI SJ MOSFET provide an extremely fast and robust body diode. Also provide an extremely

low switching, communication and conduction losses device with highest robustness make especially resonant switching

applications more reliable, more efficient, lighter and cooler, designed by Wuxi Unigroup Microelectronics Company.

Features

Applications

l Ultra-fast body diode

l Very low FOM RDS(on)×Qg

l Easy to use/drive

l 100% avalanche tested

l RoHS compliant

l Switch Mode Power Supply (SMPS)

l Uninterruptible Power Supply (UPS)

l Power Factor Correction (PFC)

l LLC Half-bridge

l Charger

TO-220

TO-220F

TO-263

TO-247

Device Marking and Package Information

Device

Package

TO-220F

TO-263

TO-220

TO-247

Marking

TPA65R190MFD

TPB65R190MFD

TPP65R190MFD

TPW65R190MFD

65R190MFD

Key Performance Parameters

Parameter

Value

700

0.19

Unit

V_DS@ T_j,max

R_DS(on),max

Q_g,typ

I_D

I_D,pulse

E_OSS@ 400V

4.98

500

112

0.54

9.6

μJ

A/μs

μC

Body Diode di_F/dt

t_rr

Q_rr

I_rrm

V1.0

www.tsinghuaicwx.com

12 3 4 5 6 7...12

中文翻译

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