Datasheet > TPB65R070D

TPB65R070D

更新时间： 2024-11-12 15:19:39

品牌	Logo	应用领域
无锡紫光微 - WUXI UNIGROUP		/
页数	文件大小	规格书
12页	773K
描述
超结功率 MOSFET（Super Junction MOSFET）是一种新型功率器件，采用基于电荷平衡的器件结构，导通电阻明显下降。在应用中可减小系统功率损耗并提高其转换效率，目前国际上Infi

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TPB65R070D 数据手册

TPA65R070D,TPB65R070D,TPP65R070D,TPW65R070D

Wuxi Unigroup Microelectronics Co.,Ltd

650V Super-junction Power MOSFET

Description

650V Super-junction Power MOSFET

Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs，designed according to the SJ

principle. The deep trench SJ MOSFET provide an extremely low switching, communication and conduction losses device with

highest robustness make especially resonant switching applications more reliable, more efficient, lighter and cooler, designed by

Wuxi Unigroup Microelectronics Company.

Features

Applications

l Very low FOM RDS(on)×Qg

l 100% avalanche tested

l Easy to use/drive

l RoHS compliant

l Switch Mode Power Supply (SMPS)

l Uninterruptible Power Supply (UPS)

l Power Factor Correction (PFC)

l Charger

TO-220F

TO-263

TO-220

TO-247

Device Marking and Package Information

Device

Package

TO-220F

TO-263

TO-220

TO-247

Marking

65R070D

TPA65R070D

TPB65R070D

TPP65R070D

TPW65R070D

Key Performance Parameters

Parameter

V_DS@ T_j,max

R_DS(on),max

Q_g,typ

Value

700

0.07

Unit

I_D

I_D,pulse

135

10.3

E_OSS@ 400V

μJ

V1.0

www.tsinghuaicwx.com

12 3 4 5 6 7...12

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