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TPA60R2K5C PDF预览

TPA60R2K5C

更新时间: 2024-11-22 17:01:23
品牌 Logo 应用领域
无锡紫光微 - WUXI UNIGROUP /
页数 文件大小 规格书
10页 577K
描述
超结功率 MOSFET(Super Junction MOSFET)是一种新型功率器件,采用基于电荷平衡的器件结构,导通电阻明显下降。在应用中可减小系统功率损耗并提高其转换效率,目前国际上Infi

TPA60R2K5C 数据手册

 浏览型号TPA60R2K5C的Datasheet PDF文件第2页浏览型号TPA60R2K5C的Datasheet PDF文件第3页浏览型号TPA60R2K5C的Datasheet PDF文件第4页浏览型号TPA60R2K5C的Datasheet PDF文件第5页浏览型号TPA60R2K5C的Datasheet PDF文件第6页浏览型号TPA60R2K5C的Datasheet PDF文件第7页 
TPA60R2K5C,TPP60R2K5C,TPU60R2K5C,TPD60R2K5C  
Wuxi Unigroup Microelectronics Company  
600V Super-Junction Power MOSFET  
FEATURES  
Very low FOM RDS(on)×Qg  
100% avalanche tested  
RoHS compliant  
APPLICATIONS  
D
S
Switch Mode Power Supply (SMPS)  
Uninterruptible Power Supply (UPS)  
Power Factor Correction (PFC)  
G
Device Marking and Package Information  
Device  
TPA60R2K5C  
TPP60R2K5C  
TPU60R2K5C  
TPD60R2K5C  
TO-252  
Package  
Marking  
TO-220F  
TO-220  
TO-251  
60R2K5C  
60R2K5C  
60R2K5C  
60R2K5C  
Absolute Maximum Ratings TC = 25ºC, unless otherwise noted  
Value  
Parameter  
Symbol  
Unit  
TO-220,TO-251,TO-252  
TO-220F  
Drain-Source Voltage (VGS = 0V)  
Continuous Drain Current  
VDSS  
ID  
600  
1.6  
V
A
Pulsed Drain Current  
(note1)  
IDM  
4.8  
A
Gate-Source Voltage  
VGSS  
EAS  
IAR  
±30  
V
Single Pulse Avalanche Energy  
Avalanche Current  
(note2)  
(note1)  
(note1)  
1.25  
mJ  
A
0.5  
Repetitive Avalanche Energy  
Power Dissipation (TC = 25ºC)  
Operating Junction and Storage Temperature Range  
EAR  
PD  
0.04  
mJ  
W
ºC  
16.7  
8.1  
TJ, Tstg  
-55~+150  
Thermal Resistance  
Value  
Parameter  
Symbol  
Unit  
TO-220,TO-251,TO-252  
TO-220F  
15.4  
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient  
RthJC  
RthJA  
7.5  
62  
K/W  
80  
V3.0  
www.tsinghuaicwx.com  
1

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