Datasheet > TPA55R065DFD

TPA55R065DFD

更新时间： 2024-11-19 17:01:19

品牌	Logo	应用领域
无锡紫光微 - WUXI UNIGROUP		/
页数	文件大小	规格书
8页	577K
描述
超结功率 MOSFET（Super Junction MOSFET）是一种新型功率器件，采用基于电荷平衡的器件结构，导通电阻明显下降。在应用中可减小系统功率损耗并提高其转换效率，目前国际上Infi

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TPA55R065DFD 数据手册

TPA55R065DFD

Wuxi Unigroup Microelectronics Co.,Ltd

550V Super-junction Power MOSFET

Description

550V Super-junction Power MOSFET

Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs，designed according to the SJ

principle. The deep trench SJ MOSFET provide an extremely low switching, communication and conduction losses device with

highest robustness make especially resonant switching applications more reliable, more efficient, lighter and cooler, designed by

Wuxi Unigroup Microelectronics Company.

Features

Applications

l Ultra-fast body diode

l Very low FOM R_DS(on)×Q_g

l Easy to use/drive

l 100% avalanche tested

l RoHS compliant

l Switch Mode Power Supply (SMPS)

l Uninterruptible Power Supply (UPS)

l Power Factor Correction (PFC)

l LLC Half-bridge

l Charger

TO-220F

Device Marking and Package Information

Device

Package

Marking

TPA55R065DFD

TO-220F

55R065DFD

Key Performance Parameters

Parameter

Value

600

Unit

V_DS@ T_j,max

R_DS(on),max

0.065

Q_g,typ

I_D

I_D,pulse

135

E_OSS@ 400V

10.29

181.25

1.78

19.9

μJ

μC

t_rr

Q_rr

I_rrm

V1.0

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