5秒后页面跳转
TP868C10R PDF预览

TP868C10R

更新时间: 2024-11-16 12:20:23
品牌 Logo 应用领域
富士电机 - FUJI 整流二极管肖特基二极管
页数 文件大小 规格书
6页 623K
描述
Schottky Barrier Diode

TP868C10R 技术参数

生命周期:Active包装说明:R-PSIP-T3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.74Is Samacsys:N
应用:GENERAL PURPOSE配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PSIP-T3最大非重复峰值正向电流:160 A
元件数量:2相数:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE最大重复峰值反向电压:100 V
表面贴装:NO技术:SCHOTTKY
端子形式:THROUGH-HOLE端子位置:SINGLE
Base Number Matches:1

TP868C10R 数据手册

 浏览型号TP868C10R的Datasheet PDF文件第2页浏览型号TP868C10R的Datasheet PDF文件第3页浏览型号TP868C10R的Datasheet PDF文件第4页浏览型号TP868C10R的Datasheet PDF文件第5页浏览型号TP868C10R的Datasheet PDF文件第6页 
http://www.fujisemi.com  
FUJI Diode  
TP868C10R  
Schottky Barrier Diode  
Maximum Rating and Characteristics  
Maximum ratings (at Ta=25˚C unless otherwise specified.)  
Item  
Symbols  
Conditions  
Ratings  
Units  
Repetitive peak reverse voltage  
VRRM  
-
100  
V
50Hz square wave duty =1/2  
Tc =113˚C  
Average output current  
Io  
30*  
160  
750  
A
A
Non-repetitive forward surge current**  
I
FSM  
Sine wave, 10ms 1shot  
Non-repetitive reverse surge power  
dissipation  
PRM  
tw=10μs, Tj=25˚C  
W
Operating junction temperature  
Storage temperature  
Tj  
-
-
150  
˚C  
˚C  
Tstg  
-40 to +150  
Note* Out put current of center tap full wave connection.  
Note** Rating per element  
Electrical characteristics (at Ta=25˚C unless otherwise specified.)  
Item  
Symbols  
Conditions  
Maximum  
0.86  
Units  
V
Forward voltage***  
Reverse current***  
Thermal resistance  
Note*** Rating per element  
V
F
I = 15 A  
F
I
R
V
R
=VRRM  
200  
µA  
Rth(j-c)  
Junction to case  
1.25  
˚C/W  
Mechanical characteristics  
Item  
Conditions  
Maximum  
Units  
Approximate mass  
-
1.6  
g
1

与TP868C10R相关器件

型号 品牌 获取价格 描述 数据表
TP868C12R FUJI

获取价格

High Voltage Schottky barrier diode
TP868C15R FUJI

获取价格

High Voltage Schottky barrier diode
TP869C04R FUJI

获取价格

Schottky Barrier Diode
TP869C06R FUJI

获取价格

Schottky Barrier Diode
TP869C08R FUJI

获取价格

Schottky Barrier Diode
TP869C10R FUJI

获取价格

Schottky Barrier Diode
TP86R203NL TOSHIBA

获取价格

N-ch MOSFET, 30 V, 0.0062 Ω@10V, SOP-8, U-MOS
TP870 EXTECH

获取价格

Pocket Hygro-Thermo-Anemometer
TP8751BH INTEL

获取价格

MCS 51 8-BIT CONTROL-ORIENTED MICROCONTROLLERS
TP8751H INTEL

获取价格

MCS51 8-BIT CONTROL-ORIENTED MICROCONTROLLERS