Datasheet > TP862C12R

TP862C12R

更新时间： 2024-11-16 03:26:47

品牌	Logo	应用领域
富士电机 - FUJI		二极管
页数	文件大小	规格书
3页	79K
描述
High Voltage Schottky barrier diode

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中文翻译

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数据手册

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TP862C12R 数据手册

(150V / 20A )

TP865C15R (20A)

[0401]

High Voltage Schottky barrier diode

Outline drawings, mm

Major characteristics

Characteristics TP865C15R Units Condition

V^RRM

V^F

150

0.90

Tc=25°C MAX.

Package : T-pack

Features

Applications

Epoxy resin UL : V-0

Low VF

High frequency operation

DC-DCconverters

AC adapter

High Voltage

Connection diagram

Center tap connection

Maximum ratings and characteristics

Absolute maximum ratings (at Tc=25°C Unless otherwise specified )

Symbol

V^RSM

VRRM

Conditions

Item

Rating

150

Unit

Repetitive peak surge reverse voltage

Repetitive peak reverse voltage

Average output current

tw=500ns, duty=1/40

150

Square wave, duty=1/2

Tc=115°C

Sine wave

10ms 1shot

IFSM

Non-repetitive surge current **

Operating junction temperature

Storage temperature

150

+150

°C

Tstg

-40 to +150

* Out put current of center tap full wave connection

**Rating per element

Electrical characteristics (at Tc=25°C Unless otherwise specified )

Item

Symbol

Max.

0.90

Unit

Conditions

I^FM=10A

Forward voltage drop

Reverse current

VR=VRRM

150

µA

Junction to case

Rth(j-c)

Thermal resistance

1.25

°C/W

Mechanical characteristics

Mounting torque

Recommended torque

0.3 to 0.5

N·m

Approximate mass

12 3

中文翻译

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