Datasheet > TP847LED03

TP847LED03

更新时间： 2024-11-17 14:55:39

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	478K
描述
WBFBP-03E

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

TP847LED03 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

WBFBP-03E Plastic-Encapsulate Transistors

TP847LED03

FEATURE

TRANSISTOR (NPN)

WBFBP-03E

 Low Current

 Low Voltage

 Ultra Small SMD Plastic Package

 Complementary to TP857LED03

 For General-purpose Switching and Amplification

MARKING: D5

1. BASE

2. EMITTER

3. COLLECTOR

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

100

℃/W

℃

P_C

Collector Power Dissipation

100

R_ΘJA

T_J,T_stg

Thermal Resistance from Junction to Ambient

1250

-55～+150

Operation Junction and Storage Temperature Range

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

Test condition

I_C=10µA, I_E=0

Min

Typ

Max

Unit

Collector-base breakdown voltage

V_(BR)CBO

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CEO

V_(BR)EBO

I_CBO

I_C=10mA, I_B=0

I_E=10µA, I_C=0

V_CB=30V, I_E=0

V_EB=5V, I_C=0

Emitter cut-off current

I_EBO

110

220

475

0.2

0.4

DC current gain

h_FE*

V_CE=5V, I_C=2mA

220

V_CE(sat)1

V_CE(sat)2

V_BE(sat)1

V_BE(sat)2

I_C=10mA, I_B=0.5mA

I_C=100mA, I_B=5mA

I_C=10mA, I_B=0.5mA

I_C=100mA, I_B=5mA

V_CE=5V, I_C=2mA

Collector-emitter saturation voltage

Base-emitter saturation voltage

Base-emitter voltage

0.7

0.9

0.7

V_BE1

V_BE2

f_T

V_CE=5V, I_C=10mA

0.77

Transition frequency

V_CE=5V,I_C=10mA,f=100MHz

V_CB=10V, I_E=0, f=1MHz

100

MHz

Collector output capacitance

C_ob

2.5

V_CE=5V, I_E=0.2mA, f=1kHz,

Noise figure

R_S=1kΩ,B=200Hz

*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.

www.jscj-elec.com

Rev. - 1.1

12 3 4

中文翻译

下载PDF

与TP847LED03相关器件

型号	品牌	获取价格	描述	数据表
TP8482	ETC	获取价格	PS/2 3D 5KEY MOUSE CONTROLLER
TP8485E	3PEAK	获取价格	±12K ESD Protection, Full Fail-Safe RS-485 Tr
TP8511HB-E01	ETC	获取价格	Key Board Controller IC
TP8511HB-N01	ETC	获取价格	Key Board Controller IC
TP857LED03	CJ	获取价格	WBFBP-03E
TP858C12R	FUJI	获取价格	Schottky Barrier Diode
TP862C12R	FUJI	获取价格	High Voltage Schottky barrier diode
TP862C15R	FUJI	获取价格	High Voltage Schottky barrier diode
TP865C12R	FUJI	获取价格	High Voltage Schottky barrier diode
TP865C15R	FUJI	获取价格	Dual T-pack(P)