Datasheet > TP2535N3-GP013

TP2535N3-GP013

更新时间： 2024-11-19 15:54:55

品牌	Logo	应用领域
美国微芯 - MICROCHIP		开关晶体管
页数	文件大小	规格书
5页	597K
描述
SMALL SIGNAL, FET

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中文翻译

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技术参数
数据手册

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TP2535N3-GP013 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.64
其他特性：	LOGIC LEVEL COMPATIBLE	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	350 V	最大漏极电流 (ID)：	0.086 A
最大漏源导通电阻：	30 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss)：	25 pF	JEDEC-95代码：	TO-92
JESD-30 代码：	O-PBCY-T3	元件数量：	1
端子数量：	3	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	最低工作温度：	-55 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	ROUND
封装形式：	CYLINDRICAL	极性/信道类型：	P-CHANNEL
功耗环境最大值：	0.74 W	最大功率耗散 (Abs)：	0.74 W
表面贴装：	NO	端子形式：	THROUGH-HOLE
端子位置：	BOTTOM	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

TP2535N3-GP013 数据手册

Supertex inc.

TP2535

P-Channel Enhancement-Mode

Vertical DMOS FET

Features

General Description

► Low threshold (-2.4V max.)

► High input impedance

► Low input capacitance (60pF typical)

► Fast switching speeds

► Low on-resistance

This low threshold, enhancement-mode (normally-off)

transistor utilizes a vertical DMOS structure and Supertex’s

well-proven, silicon-gate manufacturing process. This

combination produces a device with the power handling

capabilities of bipolar transistors and the high input impedance

and positive temperature coefﬁcient inherent in MOS devices.

Characteristic of all MOS structures, this device is free

from thermal runaway and thermally-induced secondary

breakdown.

► Free from secondary breakdown

► Low input and output leakage

Applications

► Logic level interfaces - ideal for TTL and CMOS

Supertex’s vertical DMOS FETs are ideally suited to a wide

range of switching and amplifying applications where very

low threshold voltage, high breakdown voltage, high input

impedance, low input capacitance, and fast switching speeds

are desired.

► Solid state relays

► Battery operated systems

► Photo voltaic drives

► Analog switches

► General purpose line drivers

► Telecom switches

Ordering Information

Product Summary

R_DS(ON)

I_D(ON)

Part Number

Package Option

Packing

V_GS(th)

(max)

BV_DSS/BV_DGS

(max)

(min)

TP2535N3-G

3-Lead TO-92

1000/Bag

-350V

25Ω

-2.4A

-0.4V

TP2535N3-G P002

TP2535N3-G P003

Pin Conﬁguration

TP2535N3-G P005 3-Lead TO-92

TP2535N3-G P013

2000/Reel

DRAIN

TP2535N3-G P014

SOURCE

-G denotes a lead (Pb)-free / RoHS compliant package.

Contact factory for Wafer / Die availablity.

Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.

GATE

TO-92

Absolute Maximum Ratings

Parameter

Product Marking

Value

BV_DSS

BV_DGS

±20V

Drain-to-source voltage

Drain-to-gate voltage

SiTP

2 5 3 5

YYWW

YY = Year Sealed

WW = Week Sealed

= “Green” Packaging

Gate-to-source voltage

Operating and storage temperature

-55^OC to +150^OC

Package may or may not include the following marks: Si or

Absolute Maximum Ratings are those values beyond which damage to the device

may occur. Functional operation under these conditions is not implied. Continuous

operation of the device at the absolute rating level may affect device reliability. All

voltages are referenced to device ground.

TO-92

Typical Thermal Resistance

Package

θ_ja

TO-92

132^OC/W

Doc.# DSFP-TP2535

B081613

Supertex inc.

www.supertex.com

12 3 4 5

中文翻译

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与TP2535N3-GP013相关器件

型号	品牌	获取价格	描述	数据表
TP2535N3-GP014	MICROCHIP	获取价格	暂无描述
TP2535N3P001	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.3A I(D), 350V, 1-Element, P-Channel, Silicon, Meta
TP2535N3P002	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.3A I(D), 350V, 1-Element, P-Channel, Silicon, Meta
TP2535N3P003	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.086A I(D), 350V, 1-Element, P-Channel, Silicon, Me
TP2535N3P004	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.3A I(D), 350V, 1-Element, P-Channel, Silicon, Meta
TP2535N3P006	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.3A I(D), 350V, 1-Element, P-Channel, Silicon, Meta
TP2535N3P008	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.3A I(D), 350V, 1-Element, P-Channel, Silicon, Meta
TP2535N3P011	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.3A I(D), 350V, 1-Element, P-Channel, Silicon, Meta
TP2535N3P013	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.3A I(D), 350V, 1-Element, P-Channel, Silicon, Meta
TP2535N3P014	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.3A I(D), 350V, 1-Element, P-Channel, Silicon, Meta

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