TP2535

更新时间： 2024-11-18 22:42:03

品牌	Logo	应用领域
超科 - SUPERTEX		/
页数	文件大小	规格书
4页	481K
描述
P-Channel Enhancement-Mode Vertical DMOS FETs

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TP2535 数据手册

TP2535

TP2540

Low Threshold

P-Channel Enhancement-Mode

Vertical DMOS FETs

Ordering Information

Order Number / Package

BV_DSS

R_DS(ON)

V_GS(th)

I_D(ON)

(min)

BV_DGS

-350V

-400V

(max)

TO-92

TO-243AA*

—

Die^†

—

25Ω

-2.4V

-0.4A

TP2535N3

TP2540N3

TP2540N8

TP2540ND

* Same as SOT-89. Product supplied on 2000 piece carrier tape reels.

†

MIL visual screening available.

Product marking for TO-243AA

Features

TP5D❋

Where ❋ = 2-week alpha date code

❏

Low threshold — -2.4V max.

High input impedance

Low input capacitance — 125pF max.

Fast switching speeds

Low Threshold DMOS Technology

Low on resistance

These low threshold enhancement-mode (normally-off) transis-

tors utilize a vertical DMOS structure and Supertex's well-proven

silicon-gate manufacturing process. This combination produces

devices with the power handling capabilities of bipolar transistors

and with the high input impedance and positive temperature

coefficient inherent in MOS devices. Characteristic of all MOS

structures, these devices are free from thermal runaway and

thermally-induced secondary breakdown.

Free from secondary breakdown

Low input and output leakage

Complementary N- and P-channel devices

Applications

Supertex’s vertical DMOS FETs are ideally suited to a wide range

of switching and amplifying applications where very low threshold

voltage, highbreakdownvoltage, highinputimpedance, lowinput

capacitance, and fast switching speeds are desired.

❏

Logic level interfaces – ideal for TTL and CMOS

Solid state relays

Battery operated systems

Photo voltaic drives

Analog switches

Package Options

General purpose line drivers

Telecom switches

Absolute Maximum Ratings

Drain-to-Source Voltage

Drain-to-Gate Voltage

Gate-to-Source Voltage

BV_DSS

BV_DGS

± 20V

G D

TO-243AA

(SOT-89)

TO-92

Operating and Storage Temperature

-55°C to +150°C

300°C

Soldering Temperature*

* Distance of 1.6 mm from case for 10 seconds.

Note: See Package Outline section for dimensions.

11/12/01

Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability

indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to

workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the

Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.

12 3 4

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与TP2535相关器件

型号	品牌	获取价格	描述	数据表
TP2535N3	SUPERTEX	获取价格	P-Channel Enhancement-Mode Vertical DMOS FETs
TP2535N3-G	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.086A I(D), 350V, 1-Element, P-Channel, Silicon, Me
TP2535N3-G	MICROCHIP	获取价格	86mA, 350V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
TP2535N3-GP002	MICROCHIP	获取价格	SMALL SIGNAL, FET
TP2535N3-GP003	MICROCHIP	获取价格	Small Signal Field-Effect Transistor,
TP2535N3-GP005	MICROCHIP	获取价格	SMALL SIGNAL, FET
TP2535N3-GP013	MICROCHIP	获取价格	SMALL SIGNAL, FET
TP2535N3-GP014	MICROCHIP	获取价格	暂无描述
TP2535N3P001	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.3A I(D), 350V, 1-Element, P-Channel, Silicon, Meta
TP2535N3P002	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.3A I(D), 350V, 1-Element, P-Channel, Silicon, Meta

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