TP2522ND

更新时间： 2024-11-18 22:35:35

品牌	Logo	应用领域
超科 - SUPERTEX		晶体小信号场效应晶体管开关输入元件
页数	文件大小	规格书
4页	457K
描述
P-Channel Enhancement-Mode Vertical DMOS FETs

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技术参数
数据手册

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TP2522ND 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Transferred	零件包装代码：	DIE
包装说明：	UNCASED CHIP, X-XUUC-N	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.75
Is Samacsys：	N	其他特性：	LOGIC LEVEL COMPATIBLE, HIGH INPUT IMPEDANCE, LOW THRESHOLD
配置：	SINGLE WITH BUILT-IN DIODE	最小漏源击穿电压：	220 V
最大漏源导通电阻：	12 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss)：	35 pF	JESD-30 代码：	X-XUUC-N
JESD-609代码：	e0	元件数量：	1
工作模式：	ENHANCEMENT MODE	封装主体材料：	UNSPECIFIED
封装形状：	UNSPECIFIED	封装形式：	UNCASED CHIP
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	P-CHANNEL
认证状态：	Not Qualified	表面贴装：	YES
端子面层：	TIN LEAD	端子形式：	NO LEAD
端子位置：	UPPER	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

TP2522ND 数据手册

TP2520

TP2522

Low Threshold

P-Channel Enhancement-Mode

Vertical DMOS FETs

Ordering Information

Order Number / Package

BV_DSS

R_DS(ON)

(max)

V_GS(th)

(max)

I_D(ON)

(min)

BV_DGS

-200V

-220V

TO-243AA*

TP2520N8

TP2522N8

Die^†

12Ω

-2.4V

-0.75A

—

TP2522ND

* Same as SOT-89. Product supplied on 2000 piece carrier tape reels.

^†MIL visual screening available.

Product marking for TO-243AA

Features

TP5C❋

Where❋=2-weekalphadatecode

❏

Low threshold — -2.4V max.

High input impedance

Low input capacitance — 125pF max.

Fast switching speeds

Low Threshold DMOS Technology

Low on resistance

These low threshold enhancement-mode (normally-off) transis-

torsutilizeaverticalDMOSstructureandSupertex'swell-proven

silicon-gate manufacturing process. This combination produces

devices with the power handling capabilities of bipolar transis-

tors and with the high input impedance and positive temperature

coefficient inherent in MOS devices. Characteristic of all MOS

structures, these devices are free from thermal runaway and

thermally-induced secondary breakdown.

Free from secondary breakdown

Low input and output leakage

Complementary N- and P-channel devices

Applications

Supertex’s vertical DMOS FETs are ideally suited to a wide range

of switching and amplifying applications where very low threshold

voltage, highbreakdownvoltage, highinputimpedance, lowinput

capacitance, and fast switching speeds are desired.

❏

Logic level interfaces – ideal for TTL and CMOS

Solid state relays

Battery operated systems

Photo voltaic drives

Package Option

Analog switches

General purpose line drivers

Telecom switches

Absolute Maximum Ratings

Drain-to-Source Voltage

Drain-to-Gate Voltage

Gate-to-Source Voltage

BV_DSS

BV_DGS

± 20V

TO-243AA

(SOT-89)

Operating and Storage Temperature

Soldering Temperature*

-55°C to +150°C

300°C

Note: See Package Outline section for dimensions.

* Distance of 1.6 mm from case for 10 seconds.

11/12/01

Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability

indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to

workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the

Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.

12 3 4

中文翻译

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与TP2522ND相关器件

型号	品牌	获取价格	描述	数据表
TP2535	SUPERTEX	获取价格	P-Channel Enhancement-Mode Vertical DMOS FETs
TP2535	MICROCHIP	获取价格	This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS st
TP2535N3	SUPERTEX	获取价格	P-Channel Enhancement-Mode Vertical DMOS FETs
TP2535N3-G	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.086A I(D), 350V, 1-Element, P-Channel, Silicon, Me
TP2535N3-G	MICROCHIP	获取价格	86mA, 350V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
TP2535N3-GP002	MICROCHIP	获取价格	SMALL SIGNAL, FET
TP2535N3-GP003	MICROCHIP	获取价格	Small Signal Field-Effect Transistor,
TP2535N3-GP005	MICROCHIP	获取价格	SMALL SIGNAL, FET
TP2535N3-GP013	MICROCHIP	获取价格	SMALL SIGNAL, FET
TP2535N3-GP014	MICROCHIP	获取价格	暂无描述

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