Datasheet > TP2522

TP2522

更新时间： 2024-11-20 14:54:11

品牌	Logo	应用领域
美国微芯 - MICROCHIP		/
页数	文件大小	规格书
14页	307K
描述
This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure a

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TP2522 数据手册

TP2522

P-Channel Enhancement-Mode Vertical DMOS FET

Features

General Description

• –2.4V Maximum Low Threshold

• High Input Impedance

The TP2522 low-threshold, Enhancement-mode

(normally-off) transistor uses a vertical DMOS structure

and a well-proven silicon-gate manufacturing process.

This combination produces a device with the power

handling capabilities of bipolar transistors and the high

input impedance and positive temperature coefficient

inherent in MOS devices. Characteristic of all MOS

structures, this device is free from thermal runaway and

thermally induced secondary breakdown.

• 125 pF Maximum Low Input Capacitance

• Fast Switching Speeds

• Low On-Resistance

• Free from Secondary Breakdown

• Low Input and Output Leakage

Applications

Microchip’s vertical DMOS FETs are ideally suited to a

wide range of switching and amplifying applications

where very low threshold voltage, high breakdown

voltage, high input impedance, low input capacitance,

and fast switching speeds are desired.

• Logic-Level Interfaces (Ideal for TTL and CMOS)

• Solid-State Relays

• Battery-Operated Systems

• Photovoltaic Drives

• Analog Switches

• General Purpose Line Drivers

• Telecommunication Switches

Package Type

3-lead SOT-89

(Top view)

DRAIN

SOURCE

DRAIN

GATE

See Table 3-1 for pin information.

 2020 Microchip Technology Inc.

DS20006370A-page 1

12 3 4 5 6 7...14

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与TP2522相关器件

型号	品牌	获取价格	描述	数据表
TP2522_07	SUPERTEX	获取价格	P-Channel Enhancement Mode Vertical DMOS FETs
TP2522N8	SUPERTEX	获取价格	P-Channel Enhancement-Mode Vertical DMOS FETs
TP2522N8-G	SUPERTEX	获取价格	P-Channel Enhancement Mode Vertical DMOS FETs
TP2522ND	SUPERTEX	获取价格	P-Channel Enhancement-Mode Vertical DMOS FETs
TP2535	SUPERTEX	获取价格	P-Channel Enhancement-Mode Vertical DMOS FETs
TP2535	MICROCHIP	获取价格	This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS st
TP2535N3	SUPERTEX	获取价格	P-Channel Enhancement-Mode Vertical DMOS FETs
TP2535N3-G	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.086A I(D), 350V, 1-Element, P-Channel, Silicon, Me
TP2535N3-G	MICROCHIP	获取价格	86mA, 350V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
TP2535N3-GP002	MICROCHIP	获取价格	SMALL SIGNAL, FET