TP2520N8-G

更新时间： 2024-11-19 13:14:51

品牌	Logo	应用领域
超科 - SUPERTEX		/
页数	文件大小	规格书
4页	457K
描述
Power Field-Effect Transistor, 0.26A I(D), 200V, 12ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-243AA, GREEN PACKAGE-3

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技术参数
数据手册
替代型号

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TP2520N8-G 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Transferred	零件包装代码：	SOT-89
包装说明：	SMALL OUTLINE, R-PSSO-F3	针数：	3
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.29.00.75	风险等级：	5.32
Is Samacsys：	N	其他特性：	LOGIC LEVEL COMPATIBLE, LOW THRESHOLD
外壳连接：	DRAIN	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	200 V	最大漏极电流 (Abs) (ID)：	0.26 A
最大漏极电流 (ID)：	0.26 A	最大漏源导通电阻：	12 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	最大反馈电容 (Crss)：	35 pF
JEDEC-95代码：	TO-243AA	JESD-30 代码：	R-PSSO-F3
JESD-609代码：	e3	湿度敏感等级：	1
元件数量：	1	端子数量：	3
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	P-CHANNEL	最大功率耗散 (Abs)：	1.6 W
最大脉冲漏极电流 (IDM)：	2 A	认证状态：	Not Qualified
子类别：	Other Transistors	表面贴装：	YES
端子面层：	MATTE TIN	端子形式：	FLAT
端子位置：	SINGLE	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
最大关闭时间（toff）：	35 ns	最大开启时间（吨）：	25 ns
Base Number Matches：	1

TP2520N8-G 数据手册

TP2520

TP2522

Low Threshold

P-Channel Enhancement-Mode

Vertical DMOS FETs

Ordering Information

Order Number / Package

BV_DSS

R_DS(ON)

(max)

V_GS(th)

(max)

I_D(ON)

(min)

BV_DGS

-200V

-220V

TO-243AA*

TP2520N8

TP2522N8

Die^†

12Ω

-2.4V

-0.75A

—

TP2522ND

* Same as SOT-89. Product supplied on 2000 piece carrier tape reels.

^†MIL visual screening available.

Product marking for TO-243AA

Features

TP5C❋

Where❋=2-weekalphadatecode

❏

Low threshold — -2.4V max.

High input impedance

Low input capacitance — 125pF max.

Fast switching speeds

Low Threshold DMOS Technology

Low on resistance

These low threshold enhancement-mode (normally-off) transis-

torsutilizeaverticalDMOSstructureandSupertex'swell-proven

silicon-gate manufacturing process. This combination produces

devices with the power handling capabilities of bipolar transis-

tors and with the high input impedance and positive temperature

coefficient inherent in MOS devices. Characteristic of all MOS

structures, these devices are free from thermal runaway and

thermally-induced secondary breakdown.

Free from secondary breakdown

Low input and output leakage

Complementary N- and P-channel devices

Applications

Supertex’s vertical DMOS FETs are ideally suited to a wide range

of switching and amplifying applications where very low threshold

voltage, highbreakdownvoltage, highinputimpedance, lowinput

capacitance, and fast switching speeds are desired.

❏

Logic level interfaces – ideal for TTL and CMOS

Solid state relays

Battery operated systems

Photo voltaic drives

Package Option

Analog switches

General purpose line drivers

Telecom switches

Absolute Maximum Ratings

Drain-to-Source Voltage

Drain-to-Gate Voltage

Gate-to-Source Voltage

BV_DSS

BV_DGS

± 20V

TO-243AA

(SOT-89)

Operating and Storage Temperature

Soldering Temperature*

-55°C to +150°C

300°C

Note: See Package Outline section for dimensions.

* Distance of 1.6 mm from case for 10 seconds.

11/12/01

Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability

indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to

workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the

Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.

12 3 4

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TP2520N8-G 替代型号

型号	品牌	替代类型	描述	数据表
TP2520N8	SUPERTEX	功能相似	P-Channel Enhancement-Mode Vertical DMOS FETs

与TP2520N8-G相关器件

型号	品牌	获取价格	描述	数据表
TP2522	SUPERTEX	获取价格	P-Channel Enhancement-Mode Vertical DMOS FETs
TP2522	MICROCHIP	获取价格	This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS str
TP2522_07	SUPERTEX	获取价格	P-Channel Enhancement Mode Vertical DMOS FETs
TP2522N8	SUPERTEX	获取价格	P-Channel Enhancement-Mode Vertical DMOS FETs
TP2522N8-G	SUPERTEX	获取价格	P-Channel Enhancement Mode Vertical DMOS FETs
TP2522ND	SUPERTEX	获取价格	P-Channel Enhancement-Mode Vertical DMOS FETs
TP2535	SUPERTEX	获取价格	P-Channel Enhancement-Mode Vertical DMOS FETs
TP2535	MICROCHIP	获取价格	This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS st
TP2535N3	SUPERTEX	获取价格	P-Channel Enhancement-Mode Vertical DMOS FETs
TP2535N3-G	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.086A I(D), 350V, 1-Element, P-Channel, Silicon, Me

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