TP2520N8

更新时间： 2024-11-18 22:38:27

品牌	Logo	应用领域
超科 - SUPERTEX		/
页数	文件大小	规格书
4页	457K
描述
P-Channel Enhancement-Mode Vertical DMOS FETs

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TP2520N8 数据手册

TP2520

TP2522

Low Threshold

P-Channel Enhancement-Mode

Vertical DMOS FETs

Ordering Information

Order Number / Package

BV_DSS

R_DS(ON)

(max)

V_GS(th)

(max)

I_D(ON)

(min)

BV_DGS

-200V

-220V

TO-243AA*

TP2520N8

TP2522N8

Die^†

12Ω

-2.4V

-0.75A

—

TP2522ND

* Same as SOT-89. Product supplied on 2000 piece carrier tape reels.

^†MIL visual screening available.

Product marking for TO-243AA

Features

TP5C❋

Where❋=2-weekalphadatecode

❏

Low threshold — -2.4V max.

High input impedance

Low input capacitance — 125pF max.

Fast switching speeds

Low Threshold DMOS Technology

Low on resistance

These low threshold enhancement-mode (normally-off) transis-

torsutilizeaverticalDMOSstructureandSupertex'swell-proven

silicon-gate manufacturing process. This combination produces

devices with the power handling capabilities of bipolar transis-

tors and with the high input impedance and positive temperature

coefficient inherent in MOS devices. Characteristic of all MOS

structures, these devices are free from thermal runaway and

thermally-induced secondary breakdown.

Free from secondary breakdown

Low input and output leakage

Complementary N- and P-channel devices

Applications

Supertex’s vertical DMOS FETs are ideally suited to a wide range

of switching and amplifying applications where very low threshold

voltage, highbreakdownvoltage, highinputimpedance, lowinput

capacitance, and fast switching speeds are desired.

❏

Logic level interfaces – ideal for TTL and CMOS

Solid state relays

Battery operated systems

Photo voltaic drives

Package Option

Analog switches

General purpose line drivers

Telecom switches

Absolute Maximum Ratings

Drain-to-Source Voltage

Drain-to-Gate Voltage

Gate-to-Source Voltage

BV_DSS

BV_DGS

± 20V

TO-243AA

(SOT-89)

Operating and Storage Temperature

Soldering Temperature*

-55°C to +150°C

300°C

Note: See Package Outline section for dimensions.

* Distance of 1.6 mm from case for 10 seconds.

11/12/01

Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability

indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to

workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the

Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.

12 3 4

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TP2520N8 替代型号

型号	品牌	替代类型	描述	数据表
TP2520N8-G	SUPERTEX	功能相似	Power Field-Effect Transistor, 0.26A I(D), 200V, 12ohm, 1-Element, P-Channel, Silicon, Met

与TP2520N8相关器件

型号	品牌	获取价格	描述	数据表
TP2520N8-G	SUPERTEX	获取价格	Power Field-Effect Transistor, 0.26A I(D), 200V, 12ohm, 1-Element, P-Channel, Silicon, Met
TP2522	SUPERTEX	获取价格	P-Channel Enhancement-Mode Vertical DMOS FETs
TP2522	MICROCHIP	获取价格	This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS str
TP2522_07	SUPERTEX	获取价格	P-Channel Enhancement Mode Vertical DMOS FETs
TP2522N8	SUPERTEX	获取价格	P-Channel Enhancement-Mode Vertical DMOS FETs
TP2522N8-G	SUPERTEX	获取价格	P-Channel Enhancement Mode Vertical DMOS FETs
TP2522ND	SUPERTEX	获取价格	P-Channel Enhancement-Mode Vertical DMOS FETs
TP2535	SUPERTEX	获取价格	P-Channel Enhancement-Mode Vertical DMOS FETs
TP2535	MICROCHIP	获取价格	This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS st
TP2535N3	SUPERTEX	获取价格	P-Channel Enhancement-Mode Vertical DMOS FETs

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