TP2510

更新时间： 2024-11-18 22:42:03

品牌	Logo	应用领域
超科 - SUPERTEX		/
页数	文件大小	规格书
4页	457K
描述
P-Channel Enhancement-Mode Vertical DMOS FETs

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TP2510 数据手册

TP2510

Low Threshold

P-Channel Enhancement-Mode

Vertical DMOS FETs

Ordering Information

Order Number / Package

BV_DSS

R_DS(ON)

(max)

V_GS(th)

(max)

I_D(ON)

(min)

BV_DGS

TO-243AA*

Die^†

-100V

3.5Ω

-2.4V

-1.5A

TP2510N8

TP2510ND

* Same as SOT-89. Product supplied on 2000 piece carrier tape reels.

^†MIL visual screening available.

Product marking for TO-243AA

Features

TP5A❋

Where❋=2-weekalphadatecode

❏

Low threshold — -2.4V max.

High input impedance

Low input capacitance — 125pF max.

Fast switching speeds

Low Threshold DMOS Technology

These low threshold enhancement-mode (normally-off) tran-

sistors utilize a vertical DMOS structure and Supertex's well-

proven silicon-gate manufacturing process. This combination

produces devices with the power handling capabilities of bipolar

transistors and with the high input impedance and positive

temperature coefficient inherent in MOS devices. Characteristic

of all MOS structures, these devices are free from thermal

runaway and thermally-induced secondary breakdown.

Low on resistance

Free from secondary breakdown

Low input and output leakage

Complementary N- and P-channel devices

Supertex’s vertical DMOS FETs are ideally suited to a wide

range of switching and amplifying applications where very low

threshold voltage, high breakdown voltage, high input imped-

ance, low input capacitance, and fast switching speeds are de-

sired.

Applications

❏

Logic level interfaces – ideal for TTL and CMOS

Solid state relays

Battery operated systems

Photo voltaic drives

Package Option

Analog switches

General purpose line drivers

Telecom switches

Absolute Maximum Ratings

TO-243AA

(SOT-89)

Drain-to-Source Voltage

Drain-to-Gate Voltage

Gate-to-Source Voltage

BV_DSS

BV_DGS

± 20V

Operating and Storage Temperature

Soldering Temperature*

-55°C to +150°C

300°C

Note: See Package Outline section for dimensions.

* Distance of 1.6 mm from case for 10 seconds.

11/12/01

Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability

indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to

workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the

Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.

12 3 4

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TP2510 替代型号

型号	品牌	替代类型	描述	数据表
TP2510N8	SUPERTEX	功能相似	P-Channel Enhancement-Mode Vertical DMOS FETs

与TP2510相关器件

型号	品牌	获取价格	描述	数据表
TP2510_07	SUPERTEX	获取价格	Low Threshold P-Channel Enhancement Mode Vertical DMOS FETs
TP2510N8	SUPERTEX	获取价格	P-Channel Enhancement-Mode Vertical DMOS FETs
TP2510N8-G	SUPERTEX	获取价格	Low Threshold P-Channel Enhancement Mode Vertical DMOS FETs
TP2510ND	SUPERTEX	获取价格	P-Channel Enhancement-Mode Vertical DMOS FETs
TP251NR	ETC	获取价格	Analog IC
TP2520	SUPERTEX	获取价格	P-Channel Enhancement-Mode Vertical DMOS FETs
TP2520	MICROCHIP	获取价格	This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS str
TP2520_07	SUPERTEX	获取价格	P-Channel Enhancement Mode Vertical DMOS FETs
TP2520N8	SUPERTEX	获取价格	P-Channel Enhancement-Mode Vertical DMOS FETs
TP2520N8-G	SUPERTEX	获取价格	Power Field-Effect Transistor, 0.26A I(D), 200V, 12ohm, 1-Element, P-Channel, Silicon, Met

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