Datasheet > TP2506NJ

TP2506NJ

更新时间： 2024-11-24 01:19:55

品牌	Logo	应用领域
超科 - SUPERTEX		/
页数	文件大小	规格书
5页	669K
描述
P-Channel Enhancement-Mode Vertical DMOS FET

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TP2506NJ 数据手册

Supertex inc.

TP0606

P-Channel Enhancement-Mode

Vertical DMOS FET

Features

General Description

► Low threshold (-2.4V max.)

► High input impedance

► Low input capacitance (80pF typ.)

► Fast switching speeds

► Low on-resistance

This low threshold, enhancement-mode (normally-off) transistor

utilizes a vertical DMOS structure and Supertex’s well-proven,

silicon-gate manufacturing process. This combination produces a

device with the power handling capabilities of bipolar transistors

and the high input impedance and positive temperature coefﬁcient

inherent in MOS devices. Characteristic of all MOS structures,

this device is free from thermal runaway and thermally-induced

secondary breakdown.

► Free from secondary breakdown

► Low input and output leakage

Supertex’s vertical DMOS FETs are ideally suited to a wide range

of switching and amplifying applications where very low threshold

voltage, high breakdown voltage, high input impedance, low input

capacitance, and fast switching speeds are desired.

Applications

► Logic level interfaces – ideal for TTL and CMOS

► Solid state relays

► Battery operated systems

► Photo voltaic drives

► Analog switches

► General purpose line drivers

► Telecom switches

Ordering Information

Package

Wafer / Die Options

Device

TO-92

(Die in wafer form)

(Die on adhesive tape)

(Die in wafﬂe pack)

TP0606

TP0606N3-G

TP2506NW

TP2506NJ

TP2506ND

For packaged products, -G indicates package is RoHS compliant (‘Green’). Devices in Wafer / Die form are RoHS compliant (‘Green’).

Refer to Die Speciﬁcation VF25 for layout and dimensions.

Product Summary

Pin Conﬁguration

R_DS(ON)

I_D(ON)

V_GS(th)

(max)

(V)

BV_DSS/BV_DGS

Device

(max)

(Ω)

(min)

(A)

(V)

TP0606N3-G

-60

3.5

-1.5

-2.4

DRAIN

SOURCE

Absolute Maximum Ratings

Parameter

Value

BV_DSS

BV_DGS

±20V

GATE

Drain-to-source voltage

TO-92 (N3)

Drain-to-gate voltage

Product Marking

Gate-to-source voltage

-55^OC to +150^OC

SiTP

Operating and storage temperature

YY = Year Sealed

WW = Week Sealed

= “Green” Packaging

0 6 0 6

YYWW

Absolute Maximum Ratings are those values beyond which damage to the device

may occur. Functional operation under these conditions is not implied. Continuous

operation of the device at the absolute rating level may affect device reliability. All

voltages are referenced to device ground.

Package may or may not include the following marks: Si or

TO-92 (N3)

Supertex inc. ● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com

12 3 4 5

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与TP2506NJ相关器件

型号	品牌	获取价格	描述	数据表
TP2506NW	SUPERTEX	获取价格	P-Channel Enhancement-Mode Vertical DMOS FET
TP250A	TOPSTEK	获取价格	Topstek Current Transducers
TP-250-X	ETC	获取价格	SCHUTZROHR FUER THERMOELEMENTE 250MM
TP251	ETC	获取价格	Analog IC
TP2510	SUPERTEX	获取价格	P-Channel Enhancement-Mode Vertical DMOS FETs
TP2510	MICROCHIP	获取价格	This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS str
TP2510_07	SUPERTEX	获取价格	Low Threshold P-Channel Enhancement Mode Vertical DMOS FETs
TP2510N8	SUPERTEX	获取价格	P-Channel Enhancement-Mode Vertical DMOS FETs
TP2510N8-G	SUPERTEX	获取价格	Low Threshold P-Channel Enhancement Mode Vertical DMOS FETs
TP2510ND	SUPERTEX	获取价格	P-Channel Enhancement-Mode Vertical DMOS FETs

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