TP2502N8

更新时间： 2024-11-18 22:42:03

品牌	Logo	应用领域
超科 - SUPERTEX		晶体晶体管功率场效应晶体管开关脉冲
页数	文件大小	规格书
4页	456K
描述
P-Channel Enhancement-Mode Vertical DMOS FETs

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技术参数
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TP2502N8 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
零件包装代码：	SOT-89	包装说明：	SMALL OUTLINE, R-PSSO-F3
针数：	3	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8541.29.00.75
风险等级：	5.31	Is Samacsys：	N
其他特性：	LOGIC LEVEL COMPATIBLE	外壳连接：	DRAIN
配置：	SINGLE WITH BUILT-IN DIODE	最小漏源击穿电压：	20 V
最大漏极电流 (Abs) (ID)：	0.37 A	最大漏极电流 (ID)：	0.63 A
最大漏源导通电阻：	2 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss)：	25 pF	JEDEC-95代码：	TO-243AA
JESD-30 代码：	R-PSSO-F3	JESD-609代码：	e0
元件数量：	1	端子数量：	3
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	P-CHANNEL	最大功率耗散 (Abs)：	0.55 W
最大脉冲漏极电流 (IDM)：	3.3 A	认证状态：	Not Qualified
子类别：	Other Transistors	表面贴装：	YES
端子面层：	Tin/Lead (Sn/Pb)	端子形式：	FLAT
端子位置：	SINGLE	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
最大关闭时间（toff）：	27 ns	最大开启时间（吨）：	21 ns
Base Number Matches：	1

TP2502N8 数据手册

TP2502

Low Threshold

P-Channel Enhancement-Mode

Vertical DMOS FETs

Ordering Information

Order Number / Package

BV_DSS

R_DS(ON)

(max)

2.0Ω

V_GS(th)

(max)

-2.4V

I_D(ON)

(min)

-2.0A

BV_DGS

TO-243AA*

Die^†

-20V

TP2502N8

TP2502ND

* Same as SOT-89. Product supplied on 2000 piece carrier tape reels.

^†MIL visual screening available.

Product marking for TO-243AA

TP5L❋

Where❋=2-weekalphadatecode

Features

❏

Low threshold — -2.4V max.

High input impedance

Low input capacitance — 125pF max.

Fast switching speeds

Low Threshold DMOS Technology

These low threshold enhancement-mode (normally-off) power

transistors utilize a vertical DMOS structure and Supertex's well-

proven silicon-gate manufacturing process. This combination

produces devices with the power handling capabilities of bipolar

transistors and with the high input impedance and positive

temperature coefficient inherent in MOS devices. Characteristic

of all MOS structures, these devices are free from thermal

runaway and thermally induced secondary breakdown.

Low on resistance

Free from secondary breakdown

Low input and output leakage

Complementary N- and P-channel devices

Supertex’s vertical DMOS FETs are ideally suited to a wide range

of switching and amplifying applications where very low threshold

voltage, highbreakdownvoltage, highinputimpedance, lowinput

capacitance, and fast switching speeds are desired.

Applications

❏

Logic level interfaces – ideal for TTL and CMOS

Solid state relays

Package Option

Battery operated systems

Photo voltaic drives

Analog switches

General purpose line drivers

Telecom switches

Absolute Maximum Ratings

TO-243AA

(SOT-89)

Drain-to-Source Voltage

BV_DSS

BV_DGS

± 20V

Drain-to-Gate Voltage

Gate-to-Source Voltage

Operating and Storage Temperature

Soldering Temperature*

-55°C to +150°C

300°C

Note: See Package Outline section for dimensions.

* Distance of 1.6 mm from case for 10 seconds.

11/12/01

Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability

indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to

workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the

Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.

12 3 4

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与TP2502N8相关器件

型号	品牌	获取价格	描述	数据表
TP2502N8-G	SUPERTEX	获取价格	Power Field-Effect Transistor, 0.63A I(D), 20V, 2ohm, 1-Element, P-Channel, Silicon, Metal
TP2502ND	SUPERTEX	获取价格	P-Channel Enhancement-Mode Vertical DMOS FETs
TP2504N8	ETC	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 40V V(BR)DSS \| TO-243AA
TP2504ND	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 40V, 1-Element, P-Channel, Silicon, Metal-oxide Semi
TP2506ND	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semi
TP2506NJ	SUPERTEX	获取价格	P-Channel Enhancement-Mode Vertical DMOS FET
TP2506NW	SUPERTEX	获取价格	P-Channel Enhancement-Mode Vertical DMOS FET
TP250A	TOPSTEK	获取价格	Topstek Current Transducers
TP-250-X	ETC	获取价格	SCHUTZROHR FUER THERMOELEMENTE 250MM
TP251	ETC	获取价格	Analog IC

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