生命周期: | Obsolete | 包装说明: | CYLINDRICAL, O-PBCY-T3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.95 | 风险等级: | 5.84 |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 200 V |
最大漏极电流 (ID): | 0.18 A | 最大漏源导通电阻: | 10 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 最大反馈电容 (Crss): | 15 pF |
JEDEC-95代码: | TO-226AA | JESD-30 代码: | O-PBCY-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | ROUND |
封装形式: | CYLINDRICAL | 极性/信道类型: | P-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | BOTTOM |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
TP2010L18 | VISHAY |
获取价格 |
180mA, 200V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-226AA | |
TP2010L-18 | VISHAY |
获取价格 |
Small Signal Field-Effect Transistor, 0.18A I(D), 200V, 1-Element, P-Channel, Silicon, Met | |
TP2010L18-1 | VISHAY |
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Small Signal Field-Effect Transistor, 0.18A I(D), 200V, 1-Element, P-Channel, Silicon, Met | |
TP2010L-1TA | VISHAY |
获取价格 |
Small Signal Field-Effect Transistor, 0.18A I(D), 200V, 1-Element, P-Channel, Silicon, Met | |
TP2010L-2 | VISHAY |
获取价格 |
Small Signal Field-Effect Transistor, 0.18A I(D), 200V, 1-Element, P-Channel, Silicon, Met | |
TP2010L-2TA | VISHAY |
获取价格 |
Small Signal Field-Effect Transistor, 0.18A I(D), 200V, 1-Element, P-Channel, Silicon, Met | |
TP2010L-2TR1 | VISHAY |
获取价格 |
Small Signal Field-Effect Transistor, 0.18A I(D), 200V, 1-Element, P-Channel, Silicon, Met | |
TP2010LTA | VISHAY |
获取价格 |
Small Signal Field-Effect Transistor, 0.18A I(D), 200V, 1-Element, P-Channel, Silicon, Met | |
TP2010LTR1 | VISHAY |
获取价格 |
Small Signal Field-Effect Transistor, 0.18A I(D), 200V, 1-Element, P-Channel, Silicon, Met | |
TP2011 | 3PEAK |
获取价格 |
Ultra-Low Power 200nA, 1.6V, RRIO, Push-Pull Output Comparators |