Datasheet > TP15J10

TP15J10

更新时间： 2024-09-27 23:37:07

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
9页	320K
描述
TRANSISTOR \| BJT \| DARLINGTON \| PNP \| 100V V(BR)CEO \| 15A I(C) \| TO-247VAR

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中文翻译

获取价格

数据手册

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TP15J10 数据手册

SHINDENGEN

DarlingtonTransistor

OUTLINE DIMENSIONS

Case : ITO-3P

2SB1448

(TP15J10)

Unit : mm

-15A PNP

RATINGS

Absolute Maximum Ratings

Item

Symbol

Conditions

Ratings

Unit

Storage Temperature

Tstg

V_CBO

V_CEO

V_EBO

I_C

-55`+150

+150

-100

-7

Junction Temperature

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current DC

-15

Collector Current Peak

Base Current DC

I_CP

I_B

-22

-1

Base Current Peak

I_BP

-2

Total Transistor Dissipation

Dielectric Strength

P_T

Vdis

TOR

Tc = 25

0.8

N¥m

Terminals to case AC 1 minute

(Recommended torque : 0.5N¥mj

Mounting Torque

Electrical Characteristics (Tc=25)

Item

Symbol

I_CBO

Conditions

V_CB= -100V

Ratings

Max -0.1

Max -5

Unit

Collector Cutoff Current

I_CEO

V_CE= -100V

Emitter Cutoff Current

DC Current Gain

I_EBO

V_EB= -7V

h_FE

V_CE= -3V, I_C= -10A

Min 1,500

Max 15,000

Max -1.5

Max -2.0

Max 1.92

TYP 20

Collector to Emitter Saturation Voltage

Base to Emitter Saturation Voltage

Thermal Resistance

V_CE(sat)

V_BE(sat)

Æjc

I_C= -10A

I_B= -20mA

Junction to case

V_CE= -10V, I_C= -1.5A

MHz

Transition Frequency

f_T

Turn on Time

ton

Max 1

I_C= -15A

Storage Time

Fall Time

I_B1= I_B2= -20mA

R_L= 2¶

Max 4

Max 2

Ês

V_BB2= -4V

12 3 4 5 6 7...9

中文翻译

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