Datasheet > TP0101K

TP0101K

更新时间： 2024-11-08 22:19:19

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
1页	129K
描述
P-Channel 20-V (D-S) MOSFET, Low-Threshold

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TP0101K 数据手册

Specification Comparison

Vishay Siliconix

TP0101K vs. TP0101T

Description: P-Channel,20-V (D-S) MOSFET, Low Threshold

Package:

Pin Out:

SOT-23

Identical

Part Number Replacements:

TP0101K-T1-E3 Replaces TP0101T-T1-E3

TP0101K-T1-E3 Replaces TP0101T-T1

Summary of Performance:

The TP0101K is a technology upgrade with ESD protection to the original TP0101T. The ESD protection diodes on the gate

increases Gate-Body Leakage; otherwise, there is little variation regarding performance.

ABSOLUTE MAXIMUM RATINGS (T_A= 25^oC UNLESS OTHERWISE NOTED)

Parameter

Symbol

V_DS

TP0101K

TP0101T

Unit

Drain-Source Voltage

-20

Gate-Source Voltage

V_GS

-0.58

-0.46

-0.6

-0.48

T_A= 25°C

T_A= 70°C

Continuous Drain Current

Pulsed Drain Current

I_D

-2

-3

I_DM

I_S

Continuous Source Current

(MOSFET Diode Conduction)

-0.3

-0.6

0.35

0.22

0.35

0.22

T_A= 25°C

T_A= 70°C

Power Dissipation

P_D

Operating Junction & Storage Temperature Range

Maximum Junction-to-Ambient

-55 to 150

357

-55 to 150

357

°C

T_j& T_stg

R_thJA

°C/W

SPECIFICATIONS (T_J= 25^OC UNLESS OTHERWISE NOTED)

TP0101K

Typ

TP0101T

Typ

Parameter

Symbol

Unit

Min

Max

Min

Max

Static

Gate-Threshold Voltage

-0.5

-0.7

-1.0

+5000

-1

-0.5

-0.9

-1.5

+100

-1

V_GS(th)

I_GSS

Gate-Body Leakage

µA

Zero Gate Voltage Drain Current

I_DSS

-1.2

-0.5

-2.5

-0.5

V_GS= -4.5 V

_GS= -2.5 V

V_GS= -4.5 V

_GS= -2.5 V

On-State Drain Current

I_D(on)

0.42

0.64

0.65

0.85

0.45

0.69

0.65

0.85

Drain-Source On-Resistance

Ω

r_DS(on)

Forward Transconductance

Diode Forward Voltage

1300

-0.9

1300

-0.9

g_fs

-1.2

V_SD

Dynamic

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Gate Resistance

Qgs

Qgd

1400

300

250

150

2200

2020

180

720

3000

Ω

Switching^a

t_d(on)

t_r

t_d(off)

t_f

Turn-On Time

Turn-Off Time

NS denotes not specified in original datasheet

Document Number 74071

11-May-05

www.vishay.com

中文翻译

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与TP0101K相关器件

型号	品牌	获取价格	描述	数据表
TP0101K_04	VISHAY	获取价格	P-Channel 20-V (D-S) MOSFET, Low-Threshold
TP0101K_05	VISHAY	获取价格	P-Channel 20-V (D-S) MOSFET
TP0101K-T1-E3	VISHAY	获取价格	P-Channel 20-V (D-S) MOSFET, Low-Threshold
TP0101K-T1-GE3	VISHAY	获取价格	P-Channel 20-V (D-S) MOSFET, Low-Threshold
TP0101T	VISHAY	获取价格	TP0101K vs. TP0101T Specification Comparison
TP0101T-E3	VISHAY	获取价格	Small Signal Field-Effect Transistor, 0.6A I(D), 20V, 1-Element, P-Channel, Silicon, Metal
TP0101TS	VISHAY	获取价格	P-Channel 20-V (D-S) MOSFET, Low-Threshold
TP0101TS	TEMIC	获取价格	Small Signal Field-Effect Transistor, 1A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-o
TP0101TST1	VISHAY	获取价格	1000mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, TO-236, 3 PIN
TP0101TST1	TEMIC	获取价格	Small Signal Field-Effect Transistor, 1A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-o