2SJ313
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
2SJ313
Audio Frequency Power Amplifier Application
Unit: mm
z High breakdown voltage: V
= −180 V
DSS
z High forward transfer admittance: |Y | = 0.7 S (typ.)
fs
z Complementary to 2SK2013
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain−source voltage
Symbol
Rating
Unit
V
V
−180
±20
V
V
DSS
JEDEC
JEITA
―
Gate−source voltage
Drain current
GSS
(Note 1)
I
−1
A
SC-67
D
Power dissipation (Tc = 25°C)
Channel temperature
Storage temperature range
P
25
W
°C
°C
D
ch
stg
TOSHIBA
2-10R1B
T
150
Weight: 1.9 g (typ.)
T
−55~150
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
1
2006-11-16