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2SJ144-GR

更新时间: 2024-01-17 00:27:08
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体转换器开关音频放大器小信号场效应晶体管光电二极管
页数 文件大小 规格书
4页 282K
描述
Audio Frequency Amplifier Applications Analog Switch Applications Constant Current Applications Impedance Converter Applications

2SJ144-GR 技术参数

生命周期:Lifetime Buy零件包装代码:SC-70
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:unknownHTS代码:8541.21.00.95
风险等级:5.28配置:SINGLE
FET 技术:JUNCTIONJESD-30 代码:R-PDSO-G3
JESD-609代码:e0元件数量:1
端子数量:3工作模式:DEPLETION MODE
最高工作温度:125 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:P-CHANNEL认证状态:Not Qualified
子类别:FET General Purpose Small Signal表面贴装:YES
端子面层:TIN LEAD端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

2SJ144-GR 数据手册

 浏览型号2SJ144-GR的Datasheet PDF文件第2页浏览型号2SJ144-GR的Datasheet PDF文件第3页浏览型号2SJ144-GR的Datasheet PDF文件第4页 
2SJ144  
TOSHIBA Field Effect Transistor Silicon P Channel Junction Type  
2SJ144  
Audio Frequency Amplifier Applications  
Analog Switch Applications  
Unit: mm  
Constant Current Applications  
Impedance Converter Applications  
High breakdown voltage: V  
= 50 V (min)  
GDS  
High input impedance: I  
= 1.0 nA (max) (V  
= 30 V)  
GSS  
GS  
Low R  
: R  
= 270 (typ.) (I  
= 5 mA)  
DS (ON) DS (ON)  
DSS  
Small package  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Gate-drain voltage  
Symbol  
Rating  
Unit  
V
50  
10  
V
GDS  
Gate current  
I
mA  
mW  
°C  
G
Drain power dissipation  
Junction temperature  
Storage temperature range  
P
100  
D
T
j
125  
T
stg  
55~125  
°C  
Note: Using continuously under heavy loads (e.g. the application of  
high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
JEDEC  
JEITA  
SC-70  
TOSHIBA  
2-2E1B  
Weight: 6 mg (typ.)  
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and  
estimated failure rate, etc).  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Gate cut-off current  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
I
V
V
= 30 V, V = 0  
1.0  
nA  
V
GSS  
GS  
DS  
DS  
Gate-drain breakdown voltage  
V
= 0, I = 100 μA  
50  
(BR) GDS  
G
I
DSS  
(Note)  
Drain current  
V
= −10 V, V  
= 0  
1.2  
14  
mA  
DS  
GS  
Gate-source cut-off voltage  
Forward transfer admittance  
V
V
V
V
= −10 V, I = −0.1 μA  
0.3  
1.0  
6.0  
V
GS (OFF)  
DS  
DS  
D
Y ⎪  
fs  
= −10 V, V  
= 0, f = 1 kHz  
GS  
4.0  
mS  
= −10 mV, V  
= −5 mA  
= 0  
GS  
DS  
Drain-source on resistance  
R
270  
Ω
DS (ON)  
I
DSS  
Input capacitance  
C
V
V
= −10 V, V  
= 0, f = 1 MHz  
18  
pF  
pF  
iss  
DS  
DG  
GS  
Reverse transfer capacitance  
C
= −10 V, I = 0, f = 1 MHz  
3.6  
rss  
D
Note: I  
classification Y: 1.2~3.0 mA, GR (G): 2.6~6.5 mA, BL (L): 6~14 mA  
DSS  
Marking  
1
2007-11-01  

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