2SA1020
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1020
Power Amplifier Applications
Power Switching Applications
Unit: mm
•
•
•
Low Collector saturation voltage: V
= −0.5 V (max) (I = −1 A)
CE (sat) C
High-speed switching: t
= 1.0 μs (typ.)
stg
Complementary to 2SC2655
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Symbol
Rating
Unit
V
CBO
V
CEO
V
EBO
−50
−50
V
V
Collector-emitter voltage
Emitter-base voltage
−5
V
Collector current
I
−2
A
C
Collector power dissipation
Junction temperature
Storage temperature range
P
900
mW
°C
°C
C
T
150
j
T
stg
−55 to 150
JEDEC
JEITA
TO-92MOD
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
―
TOSHIBA
2-5J1A
Weight: 0.36 g (typ.)
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2006-11-09