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2SA1020O-G PDF预览

2SA1020O-G

更新时间: 2024-01-31 16:00:54
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体晶体管
页数 文件大小 规格书
5页 161K
描述
Transistor

2SA1020O-G 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknown风险等级:5.84
Base Number Matches:1

2SA1020O-G 数据手册

 浏览型号2SA1020O-G的Datasheet PDF文件第2页浏览型号2SA1020O-G的Datasheet PDF文件第3页浏览型号2SA1020O-G的Datasheet PDF文件第4页浏览型号2SA1020O-G的Datasheet PDF文件第5页 
2SA1020  
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)  
2SA1020  
Power Amplifier Applications  
Power Switching Applications  
Unit: mm  
Low Collector saturation voltage: V  
= 0.5 V (max) (I = 1 A)  
CE (sat) C  
High-speed switching: t  
= 1.0 μs (typ.)  
stg  
Complementary to 2SC2655  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
50  
50  
V
V
Collector-emitter voltage  
Emitter-base voltage  
5  
V
Collector current  
I
2  
A
C
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
900  
mW  
°C  
°C  
C
T
150  
j
T
stg  
55 to 150  
JEDEC  
JEITA  
TO-92MOD  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
TOSHIBA  
2-5J1A  
Weight: 0.36 g (typ.)  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report  
and estimated failure rate, etc).  
1
2006-11-09  

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