Datasheet > TO-263

TO-263

更新时间： 2024-09-29 21:54:51

品牌	Logo	应用领域
HSMC		晶体晶体管功率场效应晶体管
页数	文件大小	规格书
6页	74K
描述
N-Channel Power Field Effect Transistor

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中文翻译

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数据手册

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TO-263 数据手册

Spec. No. : MOS200402

Issued Date : 2004.04.01

Revised Date : 2005.03.10

Page No. : 1/6

HI-SINCERITY

MICROELECTRONICS CORP.

H06N60 Series Pin Assignment

H06N60 Series

3-Lead Plastic TO-263

Tab

N-Channel Power Field Effect Transistor

Package Code: U

Pin 1: Gate

Pin 2 & Tab: Drain

Pin 3: Source

Description

Tab

This high voltage MOSFET uses an advanced termination scheme to

provide enhanced voltage-blocking capability without degratding

performance over time. In addition, this advanced MOSFET is designed to

withstand high energy in avalanche and commutation modes. The new

energy efficient design also offers a drain-to-source diode with a fast

recovery time. Designed for high voltage, high speed switching

applications in power supplies, converters and PWM motor controls,

these devices are particularly well suited for bridge circuits where diode

speed and commutating safe operating areas are critical and offer

additional and saafety margin against unexpected voltage transients.

3-Lead Plastic TO-220AB

Package Code: E

Pin 1: Gate

Pin 2 & Tab: Drain

Pin 3: Source

3-Lead Plastic TO-220FP

Package Code: F

Pin 1: Gate

Pin 2: Drain

Pin 3: Source

Features

• Robust High Voltage Termination

• Avalanc he Energy Specified

• Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast

Recovery Diode

H06N60 Series

Symbol:

• Diode is Characterized for Use in Bridge Circuits

• IDSS and V_DS(on)Specified at Elevated Temperature

Absolute Maximum Ratings

Symbol

I_D

Parameter

Drain to Current (Continuous)

Value

Units

I_DM

Drain to Current (Pulsed)

V_GS

Gate-to-Source Voltage (Continue)

±20

Total Power Dissipation (T_C=25^oC)

H06N60U (TO-263)

H06N60E (TO-220AB)

H06N60F (TO-220FP)

110

P_D

Derate above 25^OC

H06N60U (TO-263)

H06N60E (TO-220AB)

H06N60F (TO-220FP)

W/°C

W/^oC

0.58

0.33

T_j

Operating Temperature Range

-55 to 150

^OC

T_stg

Storage Temperature Range

Single Pulse Drain-to-Source Avalanche Enrgy-Tj=25^OC

(V_DD=100V, V_GS=10V, I_L=6A, L=10mH, R_G=25Ω)

E_AS

T_L

250

260

Maximum Lead Temperature for Soldering Purposes, 1/8”

from case for 10 seconds

°C

Note: 1. V_DD=50V, I_D=10A

2. Pulse Width and frequency is limited by T_j(max)and thermal response

H06N60U, H06N60E, H06N60F

HSMC Product Specification

12 3 4 5 6

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与TO-263相关器件

型号	品牌	获取价格	描述	数据表
TO-263-2	AME	获取价格	(D2 PAK) A : MIN 9.65 MAX 10.42 B : MIN 8.28 MAX 9.66
TO-263-2L	ADMOS	获取价格	Packaging for Automatic Handling
TO-263-3	AME	获取价格	(D2 PAK) A : MIN 9.65 MAX 10.67 B : MIN 8.28 MAX 9.66
TO-263-3L	ADMOS	获取价格	Packaging for Automatic Handling
TO-263-5	AME	获取价格	Carrier Width (W) 24.0-0.1 mm Pitch (P) 4.0-0.1 mm
TO263-5	DIODES	获取价格	SUGGESTED PAD LAYOUT
TO-263-5L	ADMOS	获取价格	Packaging for Automatic Handling
TO-263AB	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier
TO-263AB	KERSEMI	获取价格	Guardring for overvoltage protection
TO263T	GMT	获取价格	Package Outline

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