型号 | 品牌 | 获取价格 | 描述 | 数据表 |
TO-263-5 | AME |
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Carrier Width (W) 24.0-0.1 mm Pitch (P) 4.0-0.1 mm |
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TO263-5 | DIODES |
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SUGGESTED PAD LAYOUT |
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TO-263-5L | ADMOS |
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Packaging for Automatic Handling |
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TO-263AB | VISHAY |
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High-Voltage Trench MOS Barrier Schottky Rectifier |
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TO-263AB | KERSEMI |
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Guardring for overvoltage protection |
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TO263T | GMT |
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Package Outline |
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TO263T-5 | GMT |
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Package Outline |
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TO-264 | IXYS |
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LinearL2 Power MOSFET w/Extended FBSOA |
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TO-268 | IXYS |
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PolarHV Power MOSFET |
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TO-269AA | VISHAY |
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Packaging Information |
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