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TN805-600B-TR PDF预览

TN805-600B-TR

更新时间: 2024-11-07 22:19:27
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可控硅
页数 文件大小 规格书
9页 164K
描述
8A SCRs

TN805-600B-TR 数据手册

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TN8, TS8 and TYNx08 Series  
®
SENSITIVE & STANDARD  
8A SCRs  
MAIN FEATURES:  
Symbol  
A
Value  
8
Unit  
G
I
A
T(RMS)  
K
V
/V  
600 to 1000  
0.2 to 15  
V
DRM RRM  
A
A
I
mA  
GT  
K
A
G
DESCRIPTION  
K
A
IPAK  
(TS8-H)  
(TN8-H)  
DPAK  
(TS8-B)  
(TN8-B)  
G
Available either in sensitive (TS8) or standard  
(TN8 / TYN) gate triggering levels, the 8A SCR  
series is suitable to fit all modes of control, found  
in applications such as overvoltage crowbar  
protection, motor control circuits in power tools  
and kitchen aids, inrush current limiting circuits,  
capacitive discharge ignition and voltage  
regulation circuits...  
A
A
K
K
A
A
Available in through-hole or surface-mount  
packages, they provide an optimized performance  
in a limited space area.  
G
G
TO-220AB  
(TYNx)  
TO-220AB  
(TS8-T)  
ABSOLUTE RATINGS (limiting values)  
Symbol  
Parameter  
Value  
Unit  
I
RMS on-state current (180° conduction angle)  
T(RMS)  
Tc = 110°C  
Tc = 110°C  
8
5
A
A
IT  
Average on-state current (180° conduction angle)  
(AV)  
TS8/TN8 TYN  
I
Non repetitive surge peak on-state  
current  
tp = 8.3 ms  
tp = 10 ms  
73  
70  
100  
95  
TSM  
Tj = 25°C  
A
²
²
2
tp = 10 ms  
F = 60 Hz  
tp = 20 µs  
Tj = 25°C  
24.5  
45  
A S  
I t  
I t Value for fusing  
Critical rate of rise of on-state current  
dI/dt  
Tj = 125°C  
50  
A/µs  
I
= 2 x I , tr 100 ns  
G
GT  
I
Peak gate current  
Tj = 125°C  
Tj = 125°C  
4
1
A
GM  
P
Average gate power dissipation  
W
G(AV)  
T
Storage junction temperature range  
Operating junction temperature range  
- 40 to + 150  
- 40 to + 125  
stg  
°C  
V
Tj  
V
Maximum peak reverse gate voltage (for TN8 & TYN only)  
5
RGM  
April 2002 - Ed: 4A  
1/9  

TN805-600B-TR 替代型号

型号 品牌 替代类型 描述 数据表
TN805-600B STMICROELECTRONICS

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