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TN4033 PDF预览

TN4033

更新时间: 2024-11-07 22:19:27
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体放大器晶体管
页数 文件大小 规格书
4页 100K
描述
PNP General Purpose Amplifier

TN4033 数据手册

 浏览型号TN4033的Datasheet PDF文件第2页浏览型号TN4033的Datasheet PDF文件第3页浏览型号TN4033的Datasheet PDF文件第4页 
Discrete POWER & Signal  
Technologies  
TN4033A  
TO-226  
C
B
E
PNP General Purpose Amplifier  
This device is designed for general purpose amplifier and switching  
applications at currents to 500 mA and collector voltages up to 70V.  
Sourced from Process 67.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCEO  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
80  
80  
V
V
Collector-Base Voltage  
Emitter-Base Voltage  
5.0  
V
Collector Current - Continuous  
Operating and Storage Junction Temperature Range  
1.0  
A
-55 to +150  
°C  
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
TN4033A  
PD  
Total Device Dissipation  
Derate above 25°C  
Thermal Resistance, Junction to Case  
1.0  
8.0  
125  
W
mW/°C  
°C/W  
Rθ  
JC  
Thermal Resistance, Junction to Ambient  
50  
Rθ  
°C/W  
JA  
1997 Fairchild Semiconductor Corporation  

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