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TN3110PM PDF预览

TN3110PM

更新时间: 2024-11-24 20:10:23
品牌 Logo 应用领域
APITECH /
页数 文件大小 规格书
1页 179K
描述
Narrow Band Medium Power Amplifier,

TN3110PM 技术参数

生命周期:TransferredReach Compliance Code:unknown
风险等级:5.69Base Number Matches:1

TN3110PM 数据手册

  
Available as: TM3110PM, 4 Pin TO-8 (T4)  
TN3110PM, 4 Pin Surface Mount (SM3)  
RF AMPLIFIER  
BX3110PM, Connectorized Housing (H1)  
MODEL  
TM3110PM  
Features  
Typical Intermodulation Performance at 25 ºC  
Second Order Harmonic Intercept Point ...... +66 dBm (Typ.)  
Second OrderTwoTone Intercept Point ....... +63 dBm (Typ.)  
Third OrderTwoTone Intercept Point ........... +45 dBm (Typ.)  
„ Superior Phase Noise Performance  
„ High Output Power: +30 dBm Typical  
„ Operating Temp. -55 ºC to +85 ºC  
„Environmental ScreeningAvailable  
Absolute Maximum (No Damage) Ratings  
Ambient OperatingTemperature ................-55ºC to +100 ºC  
StorageTemperature .................................-62ºC to +125 ºC  
CaseTemperature ..................................................+125 ºC  
DCVoltage .......................................................... +17 Volts  
Continuous RF Input Power .................................. +20 dBm  
ShortTerm RF Input Power........... 100 mW (1 Minute Max.)  
Maximum Peak Power .................... 0.2 Watt (3 µsec Max.)  
Specifications  
CHARACTERISTIC  
TYPICAL  
Ta= 25 ºC  
MIN/MAX  
Ta = -55 ºC to +85 ºC  
Frequency (MHz)  
Gain (dB)  
10 - 200 MHz  
15.5  
10 - 200 MHz  
15 Min.  
Power @ 1 dB  
Comp. (dBm)  
Guaranteed @ 25 ºC (160 MHz) Phase Noise Performance (dBc/Hz)*  
+30  
-17  
+29 Min.  
-16 Max.  
Frequency  
Typical  
Guarantee  
Reverse Isolation (dB)  
VSWR  
In  
Out  
1.8:1  
1.8:1  
2.0:1 Max.  
2.0:1 Max.  
-160  
-170  
-175  
-180  
-180  
-155  
-165  
-170  
100 Hz  
1 kHz  
10 kHz  
100 kHz  
1 MHz  
Noise Figure (dB)  
3.5  
4.5 Max.  
-175  
-175  
Power  
Vdc  
mA  
+15  
240  
+15  
250 Max.  
Note: Care should always be taken to effectively ground the case of each unit.  
*Note: Phase Noise Performance typically tested at midband.  
Bandedge performance may vary.  
Typical Performance Data  
Phase Noise (dBc/Hz)  
Gain (dB)  
Reverse Isolation (dB)  
18  
17  
16  
15  
14  
0
-10  
-20  
-30  
-130  
-140  
-150  
-160  
Stop 200 MHz -40Start 10 MHz  
Start 10 MHz 1 dB Comp. (dBm)  
Noise Figure (dB) Stop 200 MHz  
6
5
+32  
+31  
-170  
-180  
-190  
4
3
2
+30  
+29  
+28Sta rt 10 MH z  
1k  
10 k  
100k  
1M  
100  
Typical  
Start 10 MHz  
Stop 200 MHz  
Stop 200 MHz  
Stop 200 MHz  
Input VSWR  
Output VSWR  
2.0  
2.0  
Residual Phase Noise Test Conditions:  
„ Carrier Frequency: 160 MHz  
„ Power Output +29.0 dBm  
„ Temperature: 25 oC  
1.75  
1.75  
„
Agilent ES5500 System  
1.5Start 10 MHz  
1.5 St
a
r
t 10 MH z  
St
o
p 200 MHz  
Legend  
+25 ºC  
+85 ºC - - - - - - -55 ºC  
Rev.  
Spectrum Microwave · 2144 Franklin Drive N.E. · Palm Bay, Florida 32905 · PH (888) 553-7531 · Fax (888) 553-7532  
4/26/10  
Spectrum Microwave · 2707 Black Lake Place · Philadelphia, Pennsylvania 19154 · PH (215) 464-4000 · Fax (215) 464-4001  
www.SpectrumMicrowave.com  

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