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TN28F020-120

更新时间： 2024-09-18 22:40:47

品牌	Logo	应用领域
英特尔 - INTEL		闪存存储内存集成电路
页数	文件大小	规格书
38页	877K
描述
28F020 2048K (256K X 8) CMOS FLASH MEMORY

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技术参数
数据手册

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TN28F020-120 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
零件包装代码：	QFJ	包装说明：	0.450 X 0.550 INCH, PLASTIC, LCC-32
针数：	32	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8542.32.00.51
风险等级：	5.4	Is Samacsys：	N
最长访问时间：	120 ns	其他特性：	MINIMUM 100K ERASE/PROGRAM CYCLES
命令用户界面：	YES	数据轮询：	NO
耐久性：	100000 Write/Erase Cycles	JESD-30 代码：	R-PQCC-J32
JESD-609代码：	e0	长度：	13.97 mm
内存密度：	2097152 bit	内存集成电路类型：	FLASH
内存宽度：	8	功能数量：	1
端子数量：	32	字数：	262144 words
字数代码：	256000	工作模式：	ASYNCHRONOUS
最高工作温度：	85 °C	最低工作温度：	-40 °C
组织：	256KX8	封装主体材料：	PLASTIC/EPOXY
封装代码：	QCCJ	封装等效代码：	LDCC32,.5X.6
封装形状：	RECTANGULAR	封装形式：	CHIP CARRIER
并行/串行：	PARALLEL	峰值回流温度（摄氏度）：	NOT SPECIFIED
电源：	5 V	编程电压：	12 V
认证状态：	Not Qualified	座面最大高度：	3.55 mm
最大待机电流：	0.0001 A	子类别：	Flash Memories
最大压摆率：	0.03 mA	最大供电电压 (Vsup)：	5.5 V
最小供电电压 (Vsup)：	4.5 V	标称供电电压 (Vsup)：	5 V
表面贴装：	YES	技术：	CMOS
温度等级：	INDUSTRIAL	端子面层：	Tin/Lead (Sn/Pb)
端子形式：	J BEND	端子节距：	1.27 mm
端子位置：	QUAD	处于峰值回流温度下的最长时间：	NOT SPECIFIED
切换位：	NO	类型：	NOR TYPE
宽度：	11.43 mm	Base Number Matches：	1

TN28F020-120 数据手册

28F020 2048K (256K X 8) CMOS

FLASH MEMORY

Flash Electrical Chip-Erase

Command Register Architecture for

Microprocessor/Microcontroller

Compatible Write Interface

2 Second Typical Chip-Erase

Quick-Pulse Programming Algorithm

10 µS Typical Byte-Program

4 second Chip-Program

Noise Immunity Features

±10% V_CCTolerance

Maximum Latch-Up Immunity

through EPI Processing

100,000 Erase/Program Cycles

12.0 V ±5% V_PP

ETOX™ Nonvolatile Flash Technology

EPROM-Compatible Process Base

High-Volume Manufacturing

Experience

High-Performance Read

90 ns Maximum Access Time

CMOS Low Power Consumption

10 mA Typical Active Current

50 µA Typical Standby Current

0 Watts Data Retention Power

JEDEC-Standard Pinouts

32-Pin Plastic Dip

32-Lead PLCC

32-Lead TSOP

(See Packaging Spec., Order #231369)

Integrated Program/Erase Stop Timer

Extended Temperature Options

Intel’s 28F020 CMOS flash memory offers the most cost-effective and reliable alternative for read/write

random access nonvolatile memory. The 28F020 adds electrical chip-erasure and reprogramming to familiar

EPROM technology. Memory contents can be rewritten: in a test socket; in a PROM-programmer socket; on-

board during subassembly test; in-system during final test; and in-system after sale. The 28F020 increases

memory flexibility, while contributing to time and cost savings.

The 28F020 is a 2048-kilobit nonvolatile memory organized as 262,144 bytes of eight bits. Intel’s 28F020 is

offered in 32-pin plastic DIP, 32-lead PLCC, and 32-lead TSOP packages. Pin assignments conform to

JEDEC standards for byte-wide EPROMs.

Extended erase and program cycling capability is designed into Intel’s ETOX™ (EPROM Tunnel Oxide)

process technology. Advanced oxide processing, an optimized tunneling structure, and lower electric field

combine to extend reliable cycling beyond that of traditional EEPROMs. With the 12.0 V V_PPsupply, the

28F020 performs 100,000 erase and program cycles—well within the time limits of the quick-pulse

programming and quick-erase algorithms.

Intel’s 28F020 employs advanced CMOS circuitry for systems requiring high-performance access speeds,

low power consumption, and immunity to noise. Its 90 ns access time provides zero wait-state performance

for a wide range of microprocessors and microcontrollers. Maximum standby current of 100 µA translates

into power savings when the device is deselected. Finally, the highest degree of latch-up protection is

achieved through Intel’s unique EPI processing. Prevention of latch-up is provided for stresses up to 100 mA

on address and data pins, from –1 V to V_CC+ 1 V.

With Intel’s ETOX process technology base, the 28F020 builds on years of EPROM experience to yield the

highest levels of quality, reliability, and cost-effectiveness.

December 1997

Order Number: 290245-009

12 3 4 5 6 7...38

中文翻译

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与TN28F020-120相关器件

型号	品牌	获取价格	描述	数据表
TN28F020-150	INTEL	获取价格	28F020 2048K (256K X 8) CMOS FLASH MEMORY
TN28F020-150C06	INTEL	获取价格	Flash, 256KX8, 150ns, PQCC32, 0.450 X 0.550 INCH, PLASTIC, LCC-32
TN28F020-90	INTEL	获取价格	28F020 2048K (256K X 8) CMOS FLASH MEMORY
TN28F512-120	INTEL	获取价格	512K(64Kx8)CMOS FLASH MEMORY
TN29/19/7.5	FERROXCUBE	获取价格	Ferrite toroids
TN29/19/7.5-3C11	FERROXCUBE	获取价格	Ferrite toroids
TN29/19/7.5-3C90	FERROXCUBE	获取价格	Ferrite toroids
TN29/19/7.5-3E25	FERROXCUBE	获取价格	Ferrite toroids
TN2904A	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 600MA I(C) \| TO-237VAR
TN2905	CENTRAL	获取价格	Power Transistors

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